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Enhanced crystallinity and photoelectrochemical response of (Ga,N) and (Al,N) co-doped ZnO films
Sudhakar Shet
, Kwang Soon Ahn
,
N. M. Ravindra
, Yanfa Yan
, Todd Deutsch
, John Turner
, M. Al-Jassim
Physics
Research output
:
Chapter in Book/Report/Conference proceeding
›
Conference contribution
13
Scopus citations
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Keyphrases
Co-doped ZnO
100%
Co-doped ZnO Films
100%
Co-sputtering
50%
Enhanced Crystallinity
100%
High Crystallinity
50%
High Photocurrent
50%
High Temperature
50%
Impurity Incorporation
50%
Low Temperature
50%
Metal Oxide
50%
N Incorporation
50%
N-doping
50%
Nitrogen-doped ZnO
50%
Photoelectrochemical Performance
50%
Photoelectrochemical Response
100%
Post-annealing
50%
Room Temperature
50%
Substrate Temperature
50%
ZnO Film
50%
Chemistry
Ambient Reaction Temperature
12%
Crystallinity
100%
Liquid Film
100%
Metal Oxide
12%
Photocurrent
12%
Purity
25%
Material Science
Film
100%
Metal Oxide
5%
N-Type Doping
5%
ZnO
100%