Enhanced hole transport in AlGaN deep ultraviolet light-emitting diodes using a double-sided step graded superlattice electron blocking layer

Barsha Jain, Ravi Teja Velpula, Swetha Velpula, Hoang Duy Nguyen, Hieu Pham Trung Nguyen

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

In this paper, deep ultraviolet AlGaN light-emitting diodes (LEDs) with a novel double-sided step graded superlattice (DSGS) electron blocking layer (EBL) instead of a conventional EBL have been proposed for ~254 nm wavelength emission. The enhanced carrier transport in theDSGSstructure results in reduced electron leakage into the p-region, improved hole activation and hole injection, and enhanced output power and external quantum efficiency. The calculations show that output power of the DSGS structure is ~3.56 times higher and electron leakage is ~12 times lower, compared to the conventional structure. Moreover, the efficiency droop at 60 mA in the DSGS LED was found to be ~9.1%, which is ~4.5 times lower than the regular LED structure.

Original languageEnglish (US)
Pages (from-to)2564-2569
Number of pages6
JournalJournal of the Optical Society of America B: Optical Physics
Volume37
Issue number9
DOIs
StatePublished - 2020

All Science Journal Classification (ASJC) codes

  • Statistical and Nonlinear Physics
  • Atomic and Molecular Physics, and Optics

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