Enhanced hole transport in AlGaN deep ultraviolet light-emitting diodes using a double-sided step graded superlattice electron blocking layer

Barsha Jain; Ravi Teja Velpula; Swetha Velpula; Hoang Duy Nguyen; Hieu Pham Trung Nguyen

doi:10.1364/JOSAB.399773

Enhanced hole transport in AlGaN deep ultraviolet light-emitting diodes using a double-sided step graded superlattice electron blocking layer

Barsha Jain, Ravi Teja Velpula, Swetha Velpula, Hoang Duy Nguyen, Hieu Pham Trung Nguyen

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

In this paper, deep ultraviolet AlGaN light-emitting diodes (LEDs) with a novel double-sided step graded superlattice (DSGS) electron blocking layer (EBL) instead of a conventional EBL have been proposed for ~254 nm wavelength emission. The enhanced carrier transport in theDSGSstructure results in reduced electron leakage into the p-region, improved hole activation and hole injection, and enhanced output power and external quantum efficiency. The calculations show that output power of the DSGS structure is ~3.56 times higher and electron leakage is ~12 times lower, compared to the conventional structure. Moreover, the efficiency droop at 60 mA in the DSGS LED was found to be ~9.1%, which is ~4.5 times lower than the regular LED structure.

Original language	English (US)
Pages (from-to)	2564-2569
Number of pages	6
Journal	Journal of the Optical Society of America B: Optical Physics
Volume	37
Issue number	9
DOIs	https://doi.org/10.1364/JOSAB.399773
State	Published - 2020

All Science Journal Classification (ASJC) codes

Statistical and Nonlinear Physics
Atomic and Molecular Physics, and Optics

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10.1364/JOSAB.399773

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title = "Enhanced hole transport in AlGaN deep ultraviolet light-emitting diodes using a double-sided step graded superlattice electron blocking layer",

abstract = "In this paper, deep ultraviolet AlGaN light-emitting diodes (LEDs) with a novel double-sided step graded superlattice (DSGS) electron blocking layer (EBL) instead of a conventional EBL have been proposed for ~254 nm wavelength emission. The enhanced carrier transport in theDSGSstructure results in reduced electron leakage into the p-region, improved hole activation and hole injection, and enhanced output power and external quantum efficiency. The calculations show that output power of the DSGS structure is ~3.56 times higher and electron leakage is ~12 times lower, compared to the conventional structure. Moreover, the efficiency droop at 60 mA in the DSGS LED was found to be ~9.1%, which is ~4.5 times lower than the regular LED structure.",

author = "Barsha Jain and Velpula, {Ravi Teja} and Swetha Velpula and Nguyen, {Hoang Duy} and Nguyen, {Hieu Pham Trung}",

note = "Publisher Copyright: {\textcopyright} 2020 Optical Society of America.",

year = "2020",

doi = "10.1364/JOSAB.399773",

language = "English (US)",

volume = "37",

pages = "2564--2569",

journal = "Journal of the Optical Society of America B: Optical Physics",

issn = "0740-3224",

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number = "9",

}

Enhanced hole transport in AlGaN deep ultraviolet light-emitting diodes using a double-sided step graded superlattice electron blocking layer. / Jain, Barsha; Velpula, Ravi Teja; Velpula, Swetha et al.
In: Journal of the Optical Society of America B: Optical Physics, Vol. 37, No. 9, 2020, p. 2564-2569.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Enhanced hole transport in AlGaN deep ultraviolet light-emitting diodes using a double-sided step graded superlattice electron blocking layer

AU - Jain, Barsha

AU - Velpula, Ravi Teja

AU - Velpula, Swetha

AU - Nguyen, Hoang Duy

AU - Nguyen, Hieu Pham Trung

PY - 2020

Y1 - 2020

N2 - In this paper, deep ultraviolet AlGaN light-emitting diodes (LEDs) with a novel double-sided step graded superlattice (DSGS) electron blocking layer (EBL) instead of a conventional EBL have been proposed for ~254 nm wavelength emission. The enhanced carrier transport in theDSGSstructure results in reduced electron leakage into the p-region, improved hole activation and hole injection, and enhanced output power and external quantum efficiency. The calculations show that output power of the DSGS structure is ~3.56 times higher and electron leakage is ~12 times lower, compared to the conventional structure. Moreover, the efficiency droop at 60 mA in the DSGS LED was found to be ~9.1%, which is ~4.5 times lower than the regular LED structure.

AB - In this paper, deep ultraviolet AlGaN light-emitting diodes (LEDs) with a novel double-sided step graded superlattice (DSGS) electron blocking layer (EBL) instead of a conventional EBL have been proposed for ~254 nm wavelength emission. The enhanced carrier transport in theDSGSstructure results in reduced electron leakage into the p-region, improved hole activation and hole injection, and enhanced output power and external quantum efficiency. The calculations show that output power of the DSGS structure is ~3.56 times higher and electron leakage is ~12 times lower, compared to the conventional structure. Moreover, the efficiency droop at 60 mA in the DSGS LED was found to be ~9.1%, which is ~4.5 times lower than the regular LED structure.

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DO - 10.1364/JOSAB.399773

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JO - Journal of the Optical Society of America B: Optical Physics

JF - Journal of the Optical Society of America B: Optical Physics

IS - 9

ER -

Enhanced hole transport in AlGaN deep ultraviolet light-emitting diodes using a double-sided step graded superlattice electron blocking layer

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All Science Journal Classification (ASJC) codes

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