In this paper, deep ultraviolet AlGaN light-emitting diodes (LEDs) with a novel double-sided step graded superlattice (DSGS) electron blocking layer (EBL) instead of a conventional EBL have been proposed for ~254 nm wavelength emission. The enhanced carrier transport in theDSGSstructure results in reduced electron leakage into the p-region, improved hole activation and hole injection, and enhanced output power and external quantum efficiency. The calculations show that output power of the DSGS structure is ~3.56 times higher and electron leakage is ~12 times lower, compared to the conventional structure. Moreover, the efficiency droop at 60 mA in the DSGS LED was found to be ~9.1%, which is ~4.5 times lower than the regular LED structure.
|Original language||English (US)|
|Number of pages||6|
|Journal||Journal of the Optical Society of America B: Optical Physics|
|State||Published - 2020|
All Science Journal Classification (ASJC) codes
- Statistical and Nonlinear Physics
- Atomic and Molecular Physics, and Optics