Abstract
Stress-induced leakage current and time-dependent dielectric breakdown were investigated to examine the reliability of gate oxides grown on hydrogen- and deuterium-implanted silicon substrates. An order of magnitude improvement in charge-to-breakdown was observed for the deuterium-implanted devices as compared with the hydrogen-implanted ones. Such reliability improvement may be explained by the reduction of defects in the SiO 2 and Si/SiO 2 interface, such as Si dangling bonds, weak Si-Si bonds, and strained Si-O bonds due to the retention of implanted deuterium at the interface and in the bulk oxide as confirmed by secondary ion mass spectroscopy.
Original language | English (US) |
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Article number | 1673722 |
Pages (from-to) | 288-291 |
Number of pages | 4 |
Journal | IEEE Transactions on Device and Materials Reliability |
Volume | 6 |
Issue number | 2 |
DOIs | |
State | Published - Jun 2006 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Safety, Risk, Reliability and Quality
- Electrical and Electronic Engineering
Keywords
- Constant voltage stress
- Dangling bond passivation
- Deuterium implantation
- Hydrogen implantation
- Isotope effect
- Oxide breakdown
- SILC