Enhanced SiO 2 reliability on deuterium-implanted silicon

Tias Kundu, Durgamadhab Misra

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


Stress-induced leakage current and time-dependent dielectric breakdown were investigated to examine the reliability of gate oxides grown on hydrogen- and deuterium-implanted silicon substrates. An order of magnitude improvement in charge-to-breakdown was observed for the deuterium-implanted devices as compared with the hydrogen-implanted ones. Such reliability improvement may be explained by the reduction of defects in the SiO 2 and Si/SiO 2 interface, such as Si dangling bonds, weak Si-Si bonds, and strained Si-O bonds due to the retention of implanted deuterium at the interface and in the bulk oxide as confirmed by secondary ion mass spectroscopy.

Original languageEnglish (US)
Article number1673722
Pages (from-to)288-291
Number of pages4
JournalIEEE Transactions on Device and Materials Reliability
Issue number2
StatePublished - Jun 2006

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Safety, Risk, Reliability and Quality
  • Electrical and Electronic Engineering


  • Constant voltage stress
  • Dangling bond passivation
  • Deuterium implantation
  • Hydrogen implantation
  • Isotope effect
  • Oxide breakdown
  • SILC


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