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Enhanced SiO
2
reliability on deuterium-implanted silicon
Tias Kundu,
Durgamadhab Misra
Electrical and Computer Engineering
Research output
:
Contribution to journal
›
Article
›
peer-review
4
Scopus citations
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2
reliability on deuterium-implanted silicon'. Together they form a unique fingerprint.
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Engineering
Defects
100%
Dielectrics
100%
Silicon Substrate
100%
Gate Oxide
100%
Dangling Bond
100%
Stress Induced Leakage Current
100%
Si-Si Bond
100%
Implanted Device
100%
Reliability Improvement
100%
Keyphrases
Deuterium
100%
Silica
100%
Implanted Silicon
100%
Order of Magnitude
25%
Implantable Devices
25%
Silicon Substrate
25%
Si-SiO2 Interface
25%
Gate Oxide
25%
Secondary Ion Mass Spectrometry
25%
Time-dependent Dielectric Breakdown
25%
Stress Induced Leakage Current
25%
Bulk Oxides
25%
Charge to Breakdown
25%
Si-O Bond
25%
Strained Si
25%
Reliability Improvement
25%
Si Dangling Bonds
25%
Chemistry
Silicon
100%
Deuterium(.)
100%
Hydrogen
50%
Dielectric Material
25%
Secondary Ion Mass Spectroscopy
25%
Leakage Current
25%
Dangling Bond
25%
Material Science
Silicon
100%
Deuterium
100%
Oxide Compound
50%
Electrical Breakdown
25%
Secondary Ion Mass Spectrometry
25%