Abstract
We interpret NMR measurements of Si:P as indicating a strong enhancement of the electronic spin susceptibility and a spin diffusion that is slower than the electron diffusion in a disordered metal.
Original language | English (US) |
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Pages (from-to) | 121-125 |
Number of pages | 5 |
Journal | Solid State Electronics |
Volume | 28 |
Issue number | 1-2 |
DOIs | |
State | Published - 1985 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry