Enhanced spin-lattice relaxation near the metal-insulator transition

M. A. Paalanen, A. E. Ruckenstein, G. A. Thomas

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

We interpret NMR measurements of Si:P as indicating a strong enhancement of the electronic spin susceptibility and a spin diffusion that is slower than the electron diffusion in a disordered metal.

Original languageEnglish (US)
Pages (from-to)121-125
Number of pages5
JournalSolid State Electronics
Volume28
Issue number1-2
DOIs
StatePublished - Jan 1 1985
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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