Enhanced spin-lattice relaxation near the metal-insulator transition

M. A. Paalanen; A. E. Ruckenstein; G. A. Thomas

doi:10.1016/0038-1101(85)90219-9

Enhanced spin-lattice relaxation near the metal-insulator transition

M. A. Paalanen, A. E. Ruckenstein, G. A. Thomas

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We interpret NMR measurements of Si:P as indicating a strong enhancement of the electronic spin susceptibility and a spin diffusion that is slower than the electron diffusion in a disordered metal.

Original language	English (US)
Pages (from-to)	121-125
Number of pages	5
Journal	Solid State Electronics
Volume	28
Issue number	1-2
DOIs	https://doi.org/10.1016/0038-1101(85)90219-9
State	Published - 1985
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/0038-1101(85)90219-9

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title = "Enhanced spin-lattice relaxation near the metal-insulator transition",

abstract = "We interpret NMR measurements of Si:P as indicating a strong enhancement of the electronic spin susceptibility and a spin diffusion that is slower than the electron diffusion in a disordered metal.",

author = "Paalanen, \{M. A.\} and Ruckenstein, \{A. E.\} and Thomas, \{G. A.\}",

year = "1985",

doi = "10.1016/0038-1101(85)90219-9",

language = "English (US)",

volume = "28",

pages = "121--125",

journal = "Solid State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd",

number = "1-2",

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TY - JOUR

T1 - Enhanced spin-lattice relaxation near the metal-insulator transition

AU - Paalanen, M. A.

AU - Ruckenstein, A. E.

AU - Thomas, G. A.

PY - 1985

Y1 - 1985

N2 - We interpret NMR measurements of Si:P as indicating a strong enhancement of the electronic spin susceptibility and a spin diffusion that is slower than the electron diffusion in a disordered metal.

AB - We interpret NMR measurements of Si:P as indicating a strong enhancement of the electronic spin susceptibility and a spin diffusion that is slower than the electron diffusion in a disordered metal.

UR - https://www.scopus.com/pages/publications/0021299881

UR - https://www.scopus.com/inward/citedby.url?scp=0021299881&partnerID=8YFLogxK

U2 - 10.1016/0038-1101(85)90219-9

DO - 10.1016/0038-1101(85)90219-9

M3 - Article

AN - SCOPUS:0021299881

SN - 0038-1101

VL - 28

SP - 121

EP - 125

JO - Solid State Electronics

JF - Solid State Electronics

IS - 1-2

ER -

Enhanced spin-lattice relaxation near the metal-insulator transition

Abstract

All Science Journal Classification (ASJC) codes

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