Abstract
Efficient Terahertz output is generated from InGaN/GaN dot-in-a-wire light emitting diodes (LEDs) grown on Si(111). Under reverse bias, the THz output power is enhanced more than 4 times.
Original language | English (US) |
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Title of host publication | CLEO |
Subtitle of host publication | Science and Innovations, CLEO_SI 2013 |
State | Published - Nov 18 2013 |
Externally published | Yes |
Event | CLEO: Science and Innovations, CLEO_SI 2013 - San Jose, CA, United States Duration: Jun 9 2013 → Jun 14 2013 |
Other
Other | CLEO: Science and Innovations, CLEO_SI 2013 |
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Country/Territory | United States |
City | San Jose, CA |
Period | 6/9/13 → 6/14/13 |
All Science Journal Classification (ASJC) codes
- Computer Networks and Communications
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics