Enhancing Efficiency of AlGaN Ultraviolet-B Light-Emitting Diodes with Graded p-AlGaN Hole Injection Layer

Ha Quoc Thang Bui, Hoang Anh Dang, Thi Tuyet Doan, Ravi Teja Velpula, Barsha Jain, Hieu Pham Trung Nguyen, Hoang Duy Nguyen

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


Ultraviolet-B (UVB) AlGaN light-emitting diodes (LEDs) with a hybrid hole injection layer comprising a 5 nm thin p-AlxGa(1−x)N linearly graded layer (LGL), x from 0.65 to 0.50, and a 15 nm conventional p-AlGaN layer are proposed for ≈284 nm wavelength emission. The introduced p-AlxGa(1−x)N LGL effectively improves the confinement of the electrons in the active region by effectively increasing the conduction band barrier height. Moreover, it enhances the hole injection capability into the active region by energizing the holes that minimize the effective valence band barrier height. As a result, the proposed LED structure exhibits an incredibly reduced electron leakage, ten times lower than that of the conventional structure. Moreover, the output power and electroluminescence intensity of the proposed structure are enhanced by approximately twice at 60 mA current injection. Thus, the LGL LED structure can be a potential candidate for high-power UV light emitters.

Original languageEnglish (US)
Article number2100003
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number15
StatePublished - Aug 2021

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry


  • III-nitride materials
  • hole injection layers
  • polarization engineering
  • ultraviolet light-emitting diodes


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