Er-doped porous silicon led for integrated optoelectronics

L. Tsybeskov, G. F. Grom, K. D. Hirschman, H. A. Lopez, S. Chan, P. M. Fauchet, V. P. Bondarenko

Research output: Contribution to journalConference articlepeer-review

Abstract

Porous silicon (PSi) was doped by Er using electromigration from a solution and converted to Er-doped silicon-rich silicon oxide (SRSO:Er) by partial thermal oxidation at 600-950°C following densification at 1100°C in an inert atmosphere. Room-temperature photoluminescence (PL) at ≈1.5 μm is intense and decreases by less than 20% from 12 K to 300 K. The PL spectrum of SRSO:Er reveals no luminescence bands related to Si-band-edge - recombination, point defects or dislocations, and shows that the Er3+ centers are the most efficient radiative recombination centers. A light-emitting diode (LED) with an active layer made of SRSO:Er was manufactured using a pre-oxidation cleaning step to increase the quality of the interface between SRSO:Er and the top electrode. Room temperature electroluminescence at ≈1.5 μm was demonstrated.

Original languageEnglish (US)
Pages (from-to)145-150
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume486
StatePublished - Jan 1 1998
Externally publishedYes
EventProceedings of the 1997 MRS Symposium - Boston, MA, USA
Duration: Dec 1 1997Dec 3 1997

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Er-doped porous silicon led for integrated optoelectronics'. Together they form a unique fingerprint.

Cite this