Er-doped porous silicon led for integrated optoelectronics

L. Tsybeskov; G. F. Grom; K. D. Hirschman; H. A. Lopez; S. Chan; P. M. Fauchet; V. P. Bondarenko

Er-doped porous silicon led for integrated optoelectronics

L. Tsybeskov, G. F. Grom, K. D. Hirschman, H. A. Lopez, S. Chan, P. M. Fauchet, V. P. Bondarenko

Research output: Contribution to journal › Conference article › peer-review

Abstract

Porous silicon (PSi) was doped by Er using electromigration from a solution and converted to Er-doped silicon-rich silicon oxide (SRSO:Er) by partial thermal oxidation at 600-950°C following densification at 1100°C in an inert atmosphere. Room-temperature photoluminescence (PL) at ≈1.5 μm is intense and decreases by less than 20% from 12 K to 300 K. The PL spectrum of SRSO:Er reveals no luminescence bands related to Si-band-edge - recombination, point defects or dislocations, and shows that the Er³⁺ centers are the most efficient radiative recombination centers. A light-emitting diode (LED) with an active layer made of SRSO:Er was manufactured using a pre-oxidation cleaning step to increase the quality of the interface between SRSO:Er and the top electrode. Room temperature electroluminescence at ≈1.5 μm was demonstrated.

Original language	English (US)
Pages (from-to)	145-150
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	486
State	Published - 1998
Externally published	Yes
Event	Proceedings of the 1997 MRS Symposium - Boston, MA, USA Duration: Dec 1 1997 → Dec 3 1997

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{ac51d4e95a7a472cb40e8b9694a5161d,

title = "Er-doped porous silicon led for integrated optoelectronics",

abstract = "Porous silicon (PSi) was doped by Er using electromigration from a solution and converted to Er-doped silicon-rich silicon oxide (SRSO:Er) by partial thermal oxidation at 600-950°C following densification at 1100°C in an inert atmosphere. Room-temperature photoluminescence (PL) at ≈1.5 μm is intense and decreases by less than 20% from 12 K to 300 K. The PL spectrum of SRSO:Er reveals no luminescence bands related to Si-band-edge - recombination, point defects or dislocations, and shows that the Er3+ centers are the most efficient radiative recombination centers. A light-emitting diode (LED) with an active layer made of SRSO:Er was manufactured using a pre-oxidation cleaning step to increase the quality of the interface between SRSO:Er and the top electrode. Room temperature electroluminescence at ≈1.5 μm was demonstrated.",

author = "L. Tsybeskov and Grom, {G. F.} and Hirschman, {K. D.} and Lopez, {H. A.} and S. Chan and Fauchet, {P. M.} and Bondarenko, {V. P.}",

year = "1998",

language = "English (US)",

volume = "486",

pages = "145--150",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1997 MRS Symposium ; Conference date: 01-12-1997 Through 03-12-1997",

}

TY - JOUR

T1 - Er-doped porous silicon led for integrated optoelectronics

AU - Tsybeskov, L.

AU - Grom, G. F.

AU - Hirschman, K. D.

AU - Lopez, H. A.

AU - Chan, S.

AU - Fauchet, P. M.

AU - Bondarenko, V. P.

PY - 1998

Y1 - 1998

N2 - Porous silicon (PSi) was doped by Er using electromigration from a solution and converted to Er-doped silicon-rich silicon oxide (SRSO:Er) by partial thermal oxidation at 600-950°C following densification at 1100°C in an inert atmosphere. Room-temperature photoluminescence (PL) at ≈1.5 μm is intense and decreases by less than 20% from 12 K to 300 K. The PL spectrum of SRSO:Er reveals no luminescence bands related to Si-band-edge - recombination, point defects or dislocations, and shows that the Er3+ centers are the most efficient radiative recombination centers. A light-emitting diode (LED) with an active layer made of SRSO:Er was manufactured using a pre-oxidation cleaning step to increase the quality of the interface between SRSO:Er and the top electrode. Room temperature electroluminescence at ≈1.5 μm was demonstrated.

AB - Porous silicon (PSi) was doped by Er using electromigration from a solution and converted to Er-doped silicon-rich silicon oxide (SRSO:Er) by partial thermal oxidation at 600-950°C following densification at 1100°C in an inert atmosphere. Room-temperature photoluminescence (PL) at ≈1.5 μm is intense and decreases by less than 20% from 12 K to 300 K. The PL spectrum of SRSO:Er reveals no luminescence bands related to Si-band-edge - recombination, point defects or dislocations, and shows that the Er3+ centers are the most efficient radiative recombination centers. A light-emitting diode (LED) with an active layer made of SRSO:Er was manufactured using a pre-oxidation cleaning step to increase the quality of the interface between SRSO:Er and the top electrode. Room temperature electroluminescence at ≈1.5 μm was demonstrated.

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UR - http://www.scopus.com/inward/citedby.url?scp=0031620424&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0031620424

SN - 0272-9172

VL - 486

SP - 145

EP - 150

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1997 MRS Symposium

Y2 - 1 December 1997 through 3 December 1997

ER -

Er-doped porous silicon led for integrated optoelectronics

Abstract

All Science Journal Classification (ASJC) codes

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