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Er-doped porous silicon led for integrated optoelectronics
L. Tsybeskov
, G. F. Grom
, K. D. Hirschman
, H. A. Lopez
, S. Chan
, P. M. Fauchet
, V. P. Bondarenko
Research output
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peer-review
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Keyphrases
Porous Silicon
100%
Er Doping
100%
Integrated Optoelectronics
100%
Room Temperature
50%
Electroluminescence
50%
Radiative Recombination
50%
Light-emitting Diodes
50%
Dislocation
50%
Electromigration
50%
Luminescence
50%
Band Edge
50%
Thermal Oxidation
50%
Silicon Rich Oxide
50%
Er3+
50%
Recombination Centers
50%
Edge Recombination
50%
Photoluminescence Spectra
50%
Active Layer
50%
Room-temperature Photoluminescence
50%
Doped Silicon
50%
Densification
50%
Top Electrode
50%
Inert Atmosphere
50%
Pre-oxidation
50%
Engineering
Room Temperature
100%
Porous Silicon
100%
Integrated Optoelectronics
100%
Defects
50%
Radiative Recombination
50%
Light-Emitting Diode
50%
Electromigration
50%
Band Edge
50%
Silicon Oxide
50%
Recombination Centre
50%
Active Layer
50%
Thermal Oxidation
50%
Densification
50%
Material Science
Silicon
100%
Photoluminescence
100%
Oxidation Reaction
100%
Porous Silicon
100%
Oxide Compound
50%
Electroluminescence
50%
Luminescence
50%
Light-Emitting Diode
50%
Point Defect
50%
Chemical Engineering
Silicon Oxide
100%