Erbium-doped oxidized porous silicon for integrated optical waveguides

V. P. Bondarenko; V. A. Yakovtseva; L. N. Dolgii; N. N. Vorozov; N. M. Kazyuchits; L. Tsybeskov; F. Foucher

doi:10.1134/1.1262606

Erbium-doped oxidized porous silicon for integrated optical waveguides

V. P. Bondarenko, V. A. Yakovtseva, L. N. Dolgii, N. N. Vorozov, N. M. Kazyuchits, L. Tsybeskov, F. Foucher

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

It is shown for the first time that introducing erbium electrochemically into waveguide structures based on oxidized porous silicon not only preserves their waveguide properties but it also opens up prospects for producing active waveguide devices based on them. It is established that erbium in a waveguide is in an optically active state and light with wavelengths 381 and 523 nm excites the erbium ions most efficiently.

Original language	English (US)
Pages (from-to)	705-706
Number of pages	2
Journal	Technical Physics Letters
Volume	25
Issue number	9
DOIs	https://doi.org/10.1134/1.1262606
State	Published - Sep 1999
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1134/1.1262606

Cite this

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title = "Erbium-doped oxidized porous silicon for integrated optical waveguides",

abstract = "It is shown for the first time that introducing erbium electrochemically into waveguide structures based on oxidized porous silicon not only preserves their waveguide properties but it also opens up prospects for producing active waveguide devices based on them. It is established that erbium in a waveguide is in an optically active state and light with wavelengths 381 and 523 nm excites the erbium ions most efficiently.",

author = "Bondarenko, {V. P.} and Yakovtseva, {V. A.} and Dolgii, {L. N.} and Vorozov, {N. N.} and Kazyuchits, {N. M.} and L. Tsybeskov and F. Foucher",

note = "Funding Information: This work was supported in part by the CRDF (grant BE2–108).",

year = "1999",

month = sep,

doi = "10.1134/1.1262606",

language = "English (US)",

volume = "25",

pages = "705--706",

journal = "Technical Physics Letters",

issn = "1063-7850",

publisher = "Maik Nauka-Interperiodica Publishing",

number = "9",

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TY - JOUR

T1 - Erbium-doped oxidized porous silicon for integrated optical waveguides

AU - Bondarenko, V. P.

AU - Yakovtseva, V. A.

AU - Dolgii, L. N.

AU - Vorozov, N. N.

AU - Kazyuchits, N. M.

AU - Tsybeskov, L.

AU - Foucher, F.

N1 - Funding Information: This work was supported in part by the CRDF (grant BE2–108).

PY - 1999/9

Y1 - 1999/9

N2 - It is shown for the first time that introducing erbium electrochemically into waveguide structures based on oxidized porous silicon not only preserves their waveguide properties but it also opens up prospects for producing active waveguide devices based on them. It is established that erbium in a waveguide is in an optically active state and light with wavelengths 381 and 523 nm excites the erbium ions most efficiently.

AB - It is shown for the first time that introducing erbium electrochemically into waveguide structures based on oxidized porous silicon not only preserves their waveguide properties but it also opens up prospects for producing active waveguide devices based on them. It is established that erbium in a waveguide is in an optically active state and light with wavelengths 381 and 523 nm excites the erbium ions most efficiently.

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U2 - 10.1134/1.1262606

DO - 10.1134/1.1262606

M3 - Article

AN - SCOPUS:0033247781

SN - 1063-7850

VL - 25

SP - 705

EP - 706

JO - Technical Physics Letters

JF - Technical Physics Letters

IS - 9

ER -

Erbium-doped oxidized porous silicon for integrated optical waveguides

Abstract

All Science Journal Classification (ASJC) codes

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