Erbium-doped oxidized porous silicon for integrated optical waveguides

V. P. Bondarenko, V. A. Yakovtseva, L. N. Dolgii, N. N. Vorozov, N. M. Kazyuchits, L. Tsybeskov, F. Foucher

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

It is shown for the first time that introducing erbium electrochemically into waveguide structures based on oxidized porous silicon not only preserves their waveguide properties but it also opens up prospects for producing active waveguide devices based on them. It is established that erbium in a waveguide is in an optically active state and light with wavelengths 381 and 523 nm excites the erbium ions most efficiently.

Original languageEnglish (US)
Pages (from-to)705-706
Number of pages2
JournalTechnical Physics Letters
Volume25
Issue number9
DOIs
StatePublished - Sep 1999
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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