Abstract
A method of estimation of wavelength-dependent emissivity of silicon wafers using thermocouple measurements is presented here. A dynamic observer and a persistent excitation of the lamps are required for convergence of the observer's estimates to the actual values of parameters for emissivity approximation. A TI designed RTP equipment and adaptive close-loop temperature control have been used to generate the required persistent excitation. Theory of emissivity estimation by this method has been developed and illustrated by experiment with this 3-zone RTP system.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 335-340 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 429 |
| DOIs | |
| State | Published - 1996 |
| Event | Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA Duration: Apr 8 1996 → Apr 12 1996 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering