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Evaluation of encapsulation and passivation of InGaAs/InP DHBT devices for long-term reliability
R. F. Kopf, R. A. Hamm, R. W. Ryan, J. Burm, A. Tate, Y. K. Chen, G. Georgiou, D. V. Lang, F. Ren
Research output: Contribution to journal › Article › peer-review
13
Scopus
citations