Evaluation of LPCVD boron nitride as a low dielectric constant material

R. A. Levy, M. Narayan, M. Z. Karim, S. T. Hsu

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations


This study characterizes low pressure chemically vapor deposited B-N-C-H as a low dielectric constant material for interlevel dielectric applications. These films are synthesized over a temperature range of 400 to 600 °C and various flow rate ratios using triethylamine borane complex (TEAB) and NH3 as precursors. The dielectric constant of these films exhibit values which varied in the range of 2.6 to 3.5 depending on processing conditions. Low dielectric constant values are achieved at film compositions which approached stoichiometry and have minimal carbon content. The variations in the structural, optical, mechanical, and chemical properties of these films as a function of deposition conditions are also discussed.

Original languageEnglish (US)
Pages (from-to)469-478
Number of pages10
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1996
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: Apr 8 1996Apr 12 1996

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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