Evidence for CdTe1-xSx compound formation in CdTe solar cells from high-precision, temperature-dependent device measurements

Alan E. Delahoy, Zimeng Cheng, Ken Chin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

High-precision, temperature-dependent device measurements have been made on CdTe solar cells fabricated by close-spaced sublimation on CdS-coated SnO 2:F-glass substrates. In particular, the temperature dependence of Voc was measured from 110 K-310 K, taking care that the wavelengths of the incident light did not overlap the absorber band edge. The conventional deduction of the absorber bandgap Eg was clarified by taking into account its temperature dependence. Depending upon fabrication conditions, it was found that the 0 K extrapolated bandgap of the region of the absorber in which most recombination occurs was 1.33 e V, i.e. significantly less than that of CdTe. It was concluded that this region consists of the compound CdTe 1-xSx.

Original languageEnglish (US)
Title of host publication39th IEEE Photovoltaic Specialists Conference, PVSC 2013
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1945-1948
Number of pages4
ISBN (Print)9781479932993
DOIs
StatePublished - Jan 1 2013
Event39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States
Duration: Jun 16 2013Jun 21 2013

Other

Other39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Country/TerritoryUnited States
CityTampa, FL
Period6/16/136/21/13

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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