@inproceedings{d1d36c3d8fc84914bd206cb288bee652,
title = "Evidence for CdTe1-xSx compound formation in CdTe solar cells from high-precision, temperature-dependent device measurements",
abstract = "High-precision, temperature-dependent device measurements have been made on CdTe solar cells fabricated by close-spaced sublimation on CdS-coated SnO 2:F-glass substrates. In particular, the temperature dependence of Voc was measured from 110 K-310 K, taking care that the wavelengths of the incident light did not overlap the absorber band edge. The conventional deduction of the absorber bandgap Eg was clarified by taking into account its temperature dependence. Depending upon fabrication conditions, it was found that the 0 K extrapolated bandgap of the region of the absorber in which most recombination occurs was 1.33 e V, i.e. significantly less than that of CdTe. It was concluded that this region consists of the compound CdTe 1-xSx.",
keywords = "Cadmium compounds, Photovoltaic cells, Temperature, Voltage measurements",
author = "Delahoy, {Alan E.} and Zimeng Cheng and Chin, {Ken K.}",
year = "2013",
doi = "10.1109/PVSC.2013.6744851",
language = "English (US)",
isbn = "9781479932993",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1945--1948",
booktitle = "39th IEEE Photovoltaic Specialists Conference, PVSC 2013",
address = "United States",
note = "39th IEEE Photovoltaic Specialists Conference, PVSC 2013 ; Conference date: 16-06-2013 Through 21-06-2013",
}