Evidence for CdTe1-xSx compound formation in CdTe solar cells from high-precision, temperature-dependent device measurements

Alan E. Delahoy; Zimeng Cheng; Ken Chin

doi:10.1109/PVSC.2013.6744851

Evidence for CdTe_1-xS_x compound formation in CdTe solar cells from high-precision, temperature-dependent device measurements

Alan E. Delahoy, Zimeng Cheng, Ken Chin

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Scopus citations

Abstract

High-precision, temperature-dependent device measurements have been made on CdTe solar cells fabricated by close-spaced sublimation on CdS-coated SnO ₂:F-glass substrates. In particular, the temperature dependence of V_oc was measured from 110 K-310 K, taking care that the wavelengths of the incident light did not overlap the absorber band edge. The conventional deduction of the absorber bandgap E_g was clarified by taking into account its temperature dependence. Depending upon fabrication conditions, it was found that the 0 K extrapolated bandgap of the region of the absorber in which most recombination occurs was 1.33 e V, i.e. significantly less than that of CdTe. It was concluded that this region consists of the compound CdTe _1-xS_x.

Original language	English (US)
Title of host publication	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1945-1948
Number of pages	4
ISBN (Print)	9781479932993
DOIs	https://doi.org/10.1109/PVSC.2013.6744851
State	Published - Jan 1 2013
Event	39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States Duration: Jun 16 2013 → Jun 21 2013

Other

Other	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Country/Territory	United States
City	Tampa, FL
Period	6/16/13 → 6/21/13

All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC.2013.6744851

Cite this

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title = "Evidence for CdTe1-xSx compound formation in CdTe solar cells from high-precision, temperature-dependent device measurements",

abstract = "High-precision, temperature-dependent device measurements have been made on CdTe solar cells fabricated by close-spaced sublimation on CdS-coated SnO 2:F-glass substrates. In particular, the temperature dependence of Voc was measured from 110 K-310 K, taking care that the wavelengths of the incident light did not overlap the absorber band edge. The conventional deduction of the absorber bandgap Eg was clarified by taking into account its temperature dependence. Depending upon fabrication conditions, it was found that the 0 K extrapolated bandgap of the region of the absorber in which most recombination occurs was 1.33 e V, i.e. significantly less than that of CdTe. It was concluded that this region consists of the compound CdTe 1-xSx.",

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booktitle = "39th IEEE Photovoltaic Specialists Conference, PVSC 2013",

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Delahoy, AE, Cheng, Z & Chin, K 2013, Evidence for CdTe_1-xS_x compound formation in CdTe solar cells from high-precision, temperature-dependent device measurements. in 39th IEEE Photovoltaic Specialists Conference, PVSC 2013., 6744851, Institute of Electrical and Electronics Engineers Inc., pp. 1945-1948, 39th IEEE Photovoltaic Specialists Conference, PVSC 2013, Tampa, FL, United States, 6/16/13. https://doi.org/10.1109/PVSC.2013.6744851

Evidence for CdTe_1-xS_x compound formation in CdTe solar cells from high-precision, temperature-dependent device measurements. / Delahoy, Alan E.; Cheng, Zimeng; Chin, Ken.

39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc., 2013. p. 1945-1948 6744851.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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