Evidence for localization effects in compensated semiconductors

G. A. Thomas, Y. Ootuka, S. Katsumoto, S. Kobayashi, W. Sasaki

Research output: Contribution to journalArticlepeer-review

87 Scopus citations

Abstract

We report measurements of the low-temperature conductivity of Ge crystals doped with Sb as a function of net donor density and of compensation. With increasing compensation the conductivity-versus-density curve broadens toward the curve predicted by the scaling theories of localization.

Original languageEnglish (US)
Pages (from-to)4288-4290
Number of pages3
JournalPhysical Review B
Volume25
Issue number6
DOIs
StatePublished - 1982
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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