Abstract
We report measurements of the low-temperature conductivity of Ge crystals doped with Sb as a function of net donor density and of compensation. With increasing compensation the conductivity-versus-density curve broadens toward the curve predicted by the scaling theories of localization.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 4288-4290 |
| Number of pages | 3 |
| Journal | Physical Review B |
| Volume | 25 |
| Issue number | 6 |
| DOIs | |
| State | Published - 1982 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
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