Evidence for localization effects in compensated semiconductors

G. A. Thomas; Y. Ootuka; S. Katsumoto; S. Kobayashi; W. Sasaki

doi:10.1103/PhysRevB.25.4288

Evidence for localization effects in compensated semiconductors

G. A. Thomas, Y. Ootuka, S. Katsumoto, S. Kobayashi, W. Sasaki

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91 Scopus citations

Abstract

We report measurements of the low-temperature conductivity of Ge crystals doped with Sb as a function of net donor density and of compensation. With increasing compensation the conductivity-versus-density curve broadens toward the curve predicted by the scaling theories of localization.

Original language	English (US)
Pages (from-to)	4288-4290
Number of pages	3
Journal	Physical Review B
Volume	25
Issue number	6
DOIs	https://doi.org/10.1103/PhysRevB.25.4288
State	Published - 1982
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

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10.1103/PhysRevB.25.4288

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@article{f2c75820965f4c42907961ef01e174b6,

title = "Evidence for localization effects in compensated semiconductors",

abstract = "We report measurements of the low-temperature conductivity of Ge crystals doped with Sb as a function of net donor density and of compensation. With increasing compensation the conductivity-versus-density curve broadens toward the curve predicted by the scaling theories of localization.",

author = "Thomas, \{G. A.\} and Y. Ootuka and S. Katsumoto and S. Kobayashi and W. Sasaki",

year = "1982",

doi = "10.1103/PhysRevB.25.4288",

language = "English (US)",

volume = "25",

pages = "4288--4290",

journal = "Physical Review B",

issn = "0163-1829",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - Evidence for localization effects in compensated semiconductors

AU - Thomas, G. A.

AU - Ootuka, Y.

AU - Katsumoto, S.

AU - Kobayashi, S.

AU - Sasaki, W.

PY - 1982

Y1 - 1982

N2 - We report measurements of the low-temperature conductivity of Ge crystals doped with Sb as a function of net donor density and of compensation. With increasing compensation the conductivity-versus-density curve broadens toward the curve predicted by the scaling theories of localization.

AB - We report measurements of the low-temperature conductivity of Ge crystals doped with Sb as a function of net donor density and of compensation. With increasing compensation the conductivity-versus-density curve broadens toward the curve predicted by the scaling theories of localization.

UR - https://www.scopus.com/pages/publications/0001443035

UR - https://www.scopus.com/inward/citedby.url?scp=0001443035&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.25.4288

DO - 10.1103/PhysRevB.25.4288

M3 - Article

AN - SCOPUS:0001443035

SN - 0163-1829

VL - 25

SP - 4288

EP - 4290

JO - Physical Review B

JF - Physical Review B

IS - 6

ER -

Evidence for localization effects in compensated semiconductors

Abstract

All Science Journal Classification (ASJC) codes

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