Evidence from spectral emissometry for conduction intraband transitions in the intrinsic regime for silicon

S. Abedrabbo, J. C. Hensel, A. T. Fiory, N. M. Ravindra

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3 Scopus citations

Abstract

From emissometry measurements in lightly doped Si at elevated temperatures, we have observed an anomalous absorption band in the wavelength range of 1-5 μm. The wavelength at which the band peaks, λ≈2.3 μm, shows a negligible dependence on temperature while the peak intensity increases with temperature presumably as a result of the increasing intrinsic carrier concentration. Spitzer and Fan reported a similar absorption band in direct absorption measurements at room temperature for n-type Si with extrinsic electron concentrations of 1014 to 1019 cm-3. No such structure was found in extrinsic p-type Si. Spitzer and Fan were unable to identify the mechanism for this anomalous absorption. In both the experiments, this absorption of free electrons is due to intraband transitions in the conduction band from the Δ1 conduction band edge across an energy gap of E to approximately 0.5 eV to a higher lying Δ2′ conduction band.

Original languageEnglish (US)
Pages (from-to)1390-1393
Number of pages4
JournalJournal of Electronic Materials
Volume28
Issue number12
DOIs
StatePublished - Dec 1999

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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