Evidence of deep energy states from low temperature measurements and their role in charge trapping in metal gate/hf-silicate gate stacks

N. A. Chowdhury, P. Srinivasan, D. Misra

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

Pre-existing electron and hole trap energy levels, lying deep within the bulk high-κ bandgap, are experimentally observed from low temperature measurements for the first time in metal organic chemical vapor deposited (MOCVD) TiN/HfSixOy based gate stacks. Their role in trapping under constant voltage and substrate hot hole stress conditions is investigated. Mixed degradation due to both electron and hole trapping in the deep pre-existing bulk traps, which induces a turn-around effect in fiatband voltage shift (ΔVFB), is observed for n-channel MOS capacitors under gate injection. Bulk hole trap generation, which causes ΔV FB to follow tn power law dependence, is observed for p+-ringed p-channel MOS capacitors under substrate hot hole injection. Activation energies of the stress induced traps and pre-existing deep defects are experimentally found to be different. copyright The Electrochemical Society.

Original languageEnglish (US)
Title of host publicationPhysics and Technology of High-k Gate Dielectrics III
PublisherElectrochemical Society Inc.
Pages767-775
Number of pages9
Edition5
ISBN (Electronic)9781607685395
DOIs
StatePublished - 2006
Event3rd International Symposium on High Dielectric Constant Gate Stacks - 208th Meeting of the Electrochemical Society - Los Angeles, CA, United States
Duration: Oct 16 2005Oct 21 2005

Publication series

NameECS Transactions
Number5
Volume1
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other3rd International Symposium on High Dielectric Constant Gate Stacks - 208th Meeting of the Electrochemical Society
Country/TerritoryUnited States
CityLos Angeles, CA
Period10/16/0510/21/05

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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