Evidence of Silicon Band-Edge Emission Enhancement When Interfaced with SiO2:Er Films

S. Abedrabbo; A. T. Fiory; N. M. Ravindra

doi:10.1007/s11837-016-2207-4

Evidence of Silicon Band-Edge Emission Enhancement When Interfaced with SiO₂:Er Films

S. Abedrabbo, A. T. Fiory, N. M. Ravindra

Physics

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Nearly two-orders of magnitude increase in room-temperature band-to-band (1.067 eV) infrared emission from crystalline silicon, coated with erbium-doped sol–gel films, have been achieved. Phonon-assisted band-to-band emission from coated and annealed p-Si is strongest for the sample annealed at 700°C. In this paper, evidence of the origin of the emission band from the band edge recombination activities is established. Enhancement of radiative recombination of free carriers is reasoned by stresses at the interface due to the annealed sol–gel-deposited silica. Comparative studies with other strained silicon samples are presented.

Original language	English (US)
Pages (from-to)	241-246
Number of pages	6
Journal	JOM
Volume	69
Issue number	2
DOIs	https://doi.org/10.1007/s11837-016-2207-4
State	Published - Feb 1 2017

All Science Journal Classification (ASJC) codes

General Materials Science
General Engineering

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10.1007/s11837-016-2207-4

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title = "Evidence of Silicon Band-Edge Emission Enhancement When Interfaced with SiO2:Er Films",

abstract = "Nearly two-orders of magnitude increase in room-temperature band-to-band (1.067 eV) infrared emission from crystalline silicon, coated with erbium-doped sol–gel films, have been achieved. Phonon-assisted band-to-band emission from coated and annealed p-Si is strongest for the sample annealed at 700°C. In this paper, evidence of the origin of the emission band from the band edge recombination activities is established. Enhancement of radiative recombination of free carriers is reasoned by stresses at the interface due to the annealed sol–gel-deposited silica. Comparative studies with other strained silicon samples are presented.",

author = "S. Abedrabbo and Fiory, {A. T.} and Ravindra, {N. M.}",

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T1 - Evidence of Silicon Band-Edge Emission Enhancement When Interfaced with SiO2:Er Films

AU - Abedrabbo, S.

AU - Fiory, A. T.

AU - Ravindra, N. M.

PY - 2017/2/1

Y1 - 2017/2/1

N2 - Nearly two-orders of magnitude increase in room-temperature band-to-band (1.067 eV) infrared emission from crystalline silicon, coated with erbium-doped sol–gel films, have been achieved. Phonon-assisted band-to-band emission from coated and annealed p-Si is strongest for the sample annealed at 700°C. In this paper, evidence of the origin of the emission band from the band edge recombination activities is established. Enhancement of radiative recombination of free carriers is reasoned by stresses at the interface due to the annealed sol–gel-deposited silica. Comparative studies with other strained silicon samples are presented.

AB - Nearly two-orders of magnitude increase in room-temperature band-to-band (1.067 eV) infrared emission from crystalline silicon, coated with erbium-doped sol–gel films, have been achieved. Phonon-assisted band-to-band emission from coated and annealed p-Si is strongest for the sample annealed at 700°C. In this paper, evidence of the origin of the emission band from the band edge recombination activities is established. Enhancement of radiative recombination of free carriers is reasoned by stresses at the interface due to the annealed sol–gel-deposited silica. Comparative studies with other strained silicon samples are presented.

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JO - JOM

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Evidence of Silicon Band-Edge Emission Enhancement When Interfaced with SiO₂:Er Films

Abstract

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