Evidence of Silicon Band-Edge Emission Enhancement When Interfaced with SiO2:Er Films

S. Abedrabbo, A. T. Fiory, N. M. Ravindra

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Nearly two-orders of magnitude increase in room-temperature band-to-band (1.067 eV) infrared emission from crystalline silicon, coated with erbium-doped sol–gel films, have been achieved. Phonon-assisted band-to-band emission from coated and annealed p-Si is strongest for the sample annealed at 700°C. In this paper, evidence of the origin of the emission band from the band edge recombination activities is established. Enhancement of radiative recombination of free carriers is reasoned by stresses at the interface due to the annealed sol–gel-deposited silica. Comparative studies with other strained silicon samples are presented.

Original languageEnglish (US)
Pages (from-to)241-246
Number of pages6
JournalJOM
Volume69
Issue number2
DOIs
StatePublished - Feb 1 2017

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)

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