Exchange bias study of sub-100 nm-diameter CoFeB/IrMn antidot and nanodot arrays fabricated by nanosphere lithography

X. Li; C. W. Leung; C. C. Chiu; K. W. Lin; Mansun Chan; Y. Zhou; Philip W.T. Pong

doi:10.1016/j.physleta.2017.06.010

Exchange bias study of sub-100 nm-diameter CoFeB/IrMn antidot and nanodot arrays fabricated by nanosphere lithography

X. Li, C. W. Leung, C. C. Chiu, K. W. Lin, Mansun Chan, Y. Zhou, Philip W.T. Pong

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Exchange-coupled bilayers are widely used as pinned layers in nanometric spintronic devices. In this work, sub-100 nm-diameter CoFeB/IrMn antidot and nanodot arrays were patterned by nanosphere lithography. The exchange bias (H_ex) and coercivity (H_c) of the nanostructures and continuous films exhibit similar exponential dependence on CoFeB layer thickness. Magnetic field annealing results in changed crystallinity, surface roughness, and magnetic properties. Reduced H_c and enhanced H_ex are observed after annealing at low temperatures, while high-temperature annealing results in higher H_c and lower H_ex. This work provides physical insights on the magnetization reversal response in nanosized spintronic devices involving CoFeB/IrMn reference layers.

Original language	English (US)
Pages (from-to)	2709-2714
Number of pages	6
Journal	Physics Letters, Section A: General, Atomic and Solid State Physics
Volume	381
Issue number	33
DOIs	https://doi.org/10.1016/j.physleta.2017.06.010
State	Published - Sep 5 2017
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

Keywords

Exchange bias
Nanosphere lithography
Nanostructures

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10.1016/j.physleta.2017.06.010

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title = "Exchange bias study of sub-100 nm-diameter CoFeB/IrMn antidot and nanodot arrays fabricated by nanosphere lithography",

abstract = "Exchange-coupled bilayers are widely used as pinned layers in nanometric spintronic devices. In this work, sub-100 nm-diameter CoFeB/IrMn antidot and nanodot arrays were patterned by nanosphere lithography. The exchange bias (Hex) and coercivity (Hc) of the nanostructures and continuous films exhibit similar exponential dependence on CoFeB layer thickness. Magnetic field annealing results in changed crystallinity, surface roughness, and magnetic properties. Reduced Hc and enhanced Hex are observed after annealing at low temperatures, while high-temperature annealing results in higher Hc and lower Hex. This work provides physical insights on the magnetization reversal response in nanosized spintronic devices involving CoFeB/IrMn reference layers.",

keywords = "Exchange bias, Nanosphere lithography, Nanostructures",

author = "X. Li and Leung, {C. W.} and Chiu, {C. C.} and Lin, {K. W.} and Mansun Chan and Y. Zhou and Pong, {Philip W.T.}",

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doi = "10.1016/j.physleta.2017.06.010",

language = "English (US)",

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T1 - Exchange bias study of sub-100 nm-diameter CoFeB/IrMn antidot and nanodot arrays fabricated by nanosphere lithography

AU - Li, X.

AU - Leung, C. W.

AU - Chiu, C. C.

AU - Lin, K. W.

AU - Chan, Mansun

AU - Zhou, Y.

AU - Pong, Philip W.T.

PY - 2017/9/5

Y1 - 2017/9/5

N2 - Exchange-coupled bilayers are widely used as pinned layers in nanometric spintronic devices. In this work, sub-100 nm-diameter CoFeB/IrMn antidot and nanodot arrays were patterned by nanosphere lithography. The exchange bias (Hex) and coercivity (Hc) of the nanostructures and continuous films exhibit similar exponential dependence on CoFeB layer thickness. Magnetic field annealing results in changed crystallinity, surface roughness, and magnetic properties. Reduced Hc and enhanced Hex are observed after annealing at low temperatures, while high-temperature annealing results in higher Hc and lower Hex. This work provides physical insights on the magnetization reversal response in nanosized spintronic devices involving CoFeB/IrMn reference layers.

AB - Exchange-coupled bilayers are widely used as pinned layers in nanometric spintronic devices. In this work, sub-100 nm-diameter CoFeB/IrMn antidot and nanodot arrays were patterned by nanosphere lithography. The exchange bias (Hex) and coercivity (Hc) of the nanostructures and continuous films exhibit similar exponential dependence on CoFeB layer thickness. Magnetic field annealing results in changed crystallinity, surface roughness, and magnetic properties. Reduced Hc and enhanced Hex are observed after annealing at low temperatures, while high-temperature annealing results in higher Hc and lower Hex. This work provides physical insights on the magnetization reversal response in nanosized spintronic devices involving CoFeB/IrMn reference layers.

KW - Exchange bias

KW - Nanosphere lithography

KW - Nanostructures

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JO - Physics Letters, Section A: General, Atomic and Solid State Physics

JF - Physics Letters, Section A: General, Atomic and Solid State Physics

IS - 33

ER -

Exchange bias study of sub-100 nm-diameter CoFeB/IrMn antidot and nanodot arrays fabricated by nanosphere lithography

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Keywords

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