Excitation-dependent photoluminescence in GeSi Stranski-Krastanov nanostructures

B. V. Kamenev, E. K. Lee, H. Y. Chang, H. Han, H. Grebel, L. Tsybeskov, T. I. Kamins

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In GeSi Stranski-Krastanov nanostructures grown by chemical vapor deposition, the authors find ∼30 meV /decade photoluminescence (PL) spectral shift toward greater photon energies as excitation intensity increases from 0.1 to 104 W cm2. The PL lifetime exhibits strong spectral dependence, and it decreases from ∼20 μs at 0.77 eV to 200 ns at 0.89 eV. The authros attribute the observed PL spectral shift and shorter PL lifetime at higher photon energies to an increasing contribution from recombination between holes populating excited Ge cluster energy states and electrons in SiGe alloy cluster regions.

Original languageEnglish (US)
Article number153106
JournalApplied Physics Letters
Issue number15
StatePublished - 2006

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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