Excitation-dependent photoluminescence in GeSi Stranski-Krastanov nanostructures

B. V. Kamenev; E. K. Lee; H. Y. Chang; H. Han; H. Grebel; L. Tsybeskov; T. I. Kamins

doi:10.1063/1.2361198

Excitation-dependent photoluminescence in GeSi Stranski-Krastanov nanostructures

B. V. Kamenev, E. K. Lee, H. Y. Chang, H. Han, H. Grebel, L. Tsybeskov, T. I. Kamins

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24 Scopus citations

Abstract

In GeSi Stranski-Krastanov nanostructures grown by chemical vapor deposition, the authors find ∼30 meV /decade photoluminescence (PL) spectral shift toward greater photon energies as excitation intensity increases from 0.1 to 104 W cm2. The PL lifetime exhibits strong spectral dependence, and it decreases from ∼20 μs at 0.77 eV to 200 ns at 0.89 eV. The authros attribute the observed PL spectral shift and shorter PL lifetime at higher photon energies to an increasing contribution from recombination between holes populating excited Ge cluster energy states and electrons in SiGe alloy cluster regions.

Original language	English (US)
Article number	153106
Journal	Applied Physics Letters
Volume	89
Issue number	15
DOIs	https://doi.org/10.1063/1.2361198
State	Published - 2006

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2361198

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@article{97498ad1c6e64e77a8f8db64aea0a96f,

title = "Excitation-dependent photoluminescence in GeSi Stranski-Krastanov nanostructures",

abstract = "In GeSi Stranski-Krastanov nanostructures grown by chemical vapor deposition, the authors find ∼30 meV /decade photoluminescence (PL) spectral shift toward greater photon energies as excitation intensity increases from 0.1 to 104 W cm2. The PL lifetime exhibits strong spectral dependence, and it decreases from ∼20 μs at 0.77 eV to 200 ns at 0.89 eV. The authros attribute the observed PL spectral shift and shorter PL lifetime at higher photon energies to an increasing contribution from recombination between holes populating excited Ge cluster energy states and electrons in SiGe alloy cluster regions.",

author = "Kamenev, {B. V.} and Lee, {E. K.} and Chang, {H. Y.} and H. Han and H. Grebel and L. Tsybeskov and Kamins, {T. I.}",

note = "Funding Information: This work is supported in part by Intel Corp., U.S. National Science Foundation, Foundation at NJIT, and Hewlett-Packard. The samples were grown at Hewlett-Packard Laboratories. The authors thank R. Stanley Williams of Hewlett-Packard for useful discussions during the course of this work. One of the authors (L.T.) thanks D. J. Lockwood for useful information and discussions.",

year = "2006",

doi = "10.1063/1.2361198",

language = "English (US)",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "15",

}

TY - JOUR

T1 - Excitation-dependent photoluminescence in GeSi Stranski-Krastanov nanostructures

AU - Kamenev, B. V.

AU - Lee, E. K.

AU - Chang, H. Y.

AU - Han, H.

AU - Grebel, H.

AU - Tsybeskov, L.

AU - Kamins, T. I.

N1 - Funding Information: This work is supported in part by Intel Corp., U.S. National Science Foundation, Foundation at NJIT, and Hewlett-Packard. The samples were grown at Hewlett-Packard Laboratories. The authors thank R. Stanley Williams of Hewlett-Packard for useful discussions during the course of this work. One of the authors (L.T.) thanks D. J. Lockwood for useful information and discussions.

PY - 2006

Y1 - 2006

N2 - In GeSi Stranski-Krastanov nanostructures grown by chemical vapor deposition, the authors find ∼30 meV /decade photoluminescence (PL) spectral shift toward greater photon energies as excitation intensity increases from 0.1 to 104 W cm2. The PL lifetime exhibits strong spectral dependence, and it decreases from ∼20 μs at 0.77 eV to 200 ns at 0.89 eV. The authros attribute the observed PL spectral shift and shorter PL lifetime at higher photon energies to an increasing contribution from recombination between holes populating excited Ge cluster energy states and electrons in SiGe alloy cluster regions.

AB - In GeSi Stranski-Krastanov nanostructures grown by chemical vapor deposition, the authors find ∼30 meV /decade photoluminescence (PL) spectral shift toward greater photon energies as excitation intensity increases from 0.1 to 104 W cm2. The PL lifetime exhibits strong spectral dependence, and it decreases from ∼20 μs at 0.77 eV to 200 ns at 0.89 eV. The authros attribute the observed PL spectral shift and shorter PL lifetime at higher photon energies to an increasing contribution from recombination between holes populating excited Ge cluster energy states and electrons in SiGe alloy cluster regions.

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DO - 10.1063/1.2361198

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VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 153106

ER -

Excitation-dependent photoluminescence in GeSi Stranski-Krastanov nanostructures

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