Excitation wavelength dependent photoluminescence in structurally non-uniform Si/SiGe-island heteroepitxial multilayers

N. Modi; D. J. Lockwood; X. Wu; J. M. Baribeau; L. Tsybeskov

doi:10.1063/1.4729077

Excitation wavelength dependent photoluminescence in structurally non-uniform Si/SiGe-island heteroepitxial multilayers

N. Modi, D. J. Lockwood, X. Wu, J. M. Baribeau, L. Tsybeskov

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

In nanometer-size Si/SiGe-island heteroepitxial multilayers grown on Si(001), low temperature photoluminescence spectra are observed that strongly depend on the excitation wavelength and show a strong correlation with structural properties revealed by transmission electron microscopy. These experimental results can be explained by assuming that the optically created carriers are strongly localized at Si/SiGe island heterointerfaces. We show that electron-hole pairs are generated and recombine within spatial regions mainly defined by the photoexcitation penetration depth, and that the estimated exciton diffusion length is notably short and comparable with the SiGe-island average size.

Original language	English (US)
Article number	114313
Journal	Journal of Applied Physics
Volume	111
Issue number	11
DOIs	https://doi.org/10.1063/1.4729077
State	Published - Jun 1 2012

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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title = "Excitation wavelength dependent photoluminescence in structurally non-uniform Si/SiGe-island heteroepitxial multilayers",

abstract = "In nanometer-size Si/SiGe-island heteroepitxial multilayers grown on Si(001), low temperature photoluminescence spectra are observed that strongly depend on the excitation wavelength and show a strong correlation with structural properties revealed by transmission electron microscopy. These experimental results can be explained by assuming that the optically created carriers are strongly localized at Si/SiGe island heterointerfaces. We show that electron-hole pairs are generated and recombine within spatial regions mainly defined by the photoexcitation penetration depth, and that the estimated exciton diffusion length is notably short and comparable with the SiGe-island average size.",

author = "N. Modi and Lockwood, {D. J.} and X. Wu and Baribeau, {J. M.} and L. Tsybeskov",

note = "Funding Information: This work is supported by National Science Foundation, Hewlett-Packard Research Laboratories and Foundation at NJIT.",

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T1 - Excitation wavelength dependent photoluminescence in structurally non-uniform Si/SiGe-island heteroepitxial multilayers

AU - Modi, N.

AU - Lockwood, D. J.

AU - Wu, X.

AU - Baribeau, J. M.

AU - Tsybeskov, L.

N1 - Funding Information: This work is supported by National Science Foundation, Hewlett-Packard Research Laboratories and Foundation at NJIT.

PY - 2012/6/1

Y1 - 2012/6/1

N2 - In nanometer-size Si/SiGe-island heteroepitxial multilayers grown on Si(001), low temperature photoluminescence spectra are observed that strongly depend on the excitation wavelength and show a strong correlation with structural properties revealed by transmission electron microscopy. These experimental results can be explained by assuming that the optically created carriers are strongly localized at Si/SiGe island heterointerfaces. We show that electron-hole pairs are generated and recombine within spatial regions mainly defined by the photoexcitation penetration depth, and that the estimated exciton diffusion length is notably short and comparable with the SiGe-island average size.

AB - In nanometer-size Si/SiGe-island heteroepitxial multilayers grown on Si(001), low temperature photoluminescence spectra are observed that strongly depend on the excitation wavelength and show a strong correlation with structural properties revealed by transmission electron microscopy. These experimental results can be explained by assuming that the optically created carriers are strongly localized at Si/SiGe island heterointerfaces. We show that electron-hole pairs are generated and recombine within spatial regions mainly defined by the photoexcitation penetration depth, and that the estimated exciton diffusion length is notably short and comparable with the SiGe-island average size.

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Excitation wavelength dependent photoluminescence in structurally non-uniform Si/SiGe-island heteroepitxial multilayers

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