Exciton photoluminescence and energy transfer in nanocrystalline Si/ Si dioxide superlattice structures

V. Yu Timoshenko; O. A. Shalygina; M. G. Lisachenko; P. K. Kashkarov; D. Kovalev; J. Heitmann; M. Zacharias; B. V. Kamenev; L. Tsybeskov

doi:10.1557/proc-789-n11.2

Exciton photoluminescence and energy transfer in nanocrystalline Si/ Si dioxide superlattice structures

V. Yu Timoshenko, O. A. Shalygina, M. G. Lisachenko, P. K. Kashkarov, D. Kovalev, J. Heitmann, M. Zacharias, B. V. Kamenev, L. Tsybeskov

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

Photoluminescence (PL) of nanocrystalline Si (nc-Si) assemblies formed by thermal crystallization of amorphous Si/SiO₂ and SiO/SiO₂ superlattices (SLs) has been investigated at different temperatures and excitation conditions. The low temperature resonant PL spectroscopy reveals phonon-assisted excitonic recombination. At room temperature the samples formed from a-SiO/SiO₂ SLs possess relatively high PL quantum yield (∼ 1%). The PL transients have non-exponential decay, which indicates the exciton energy transfer in nc-Si ensembles. The excitonic energy of Er-doped nc-Si SL structures can be almost completely transferred to Er ions incorporated in SiO₂ matrix that results in a strong emission line at 0.81 eV.

Original language	English (US)
Pages (from-to)	227-232
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	789
DOIs	https://doi.org/10.1557/proc-789-n11.2
State	Published - 2003
Event	Quantum Dots, Nanoparticles and Nanowires - Boston, MA, United States Duration: Dec 1 2003 → Dec 5 2003

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{7c2287d5fa114350a3eee88640165ba8,

title = "Exciton photoluminescence and energy transfer in nanocrystalline Si/ Si dioxide superlattice structures",

abstract = "Photoluminescence (PL) of nanocrystalline Si (nc-Si) assemblies formed by thermal crystallization of amorphous Si/SiO2 and SiO/SiO2 superlattices (SLs) has been investigated at different temperatures and excitation conditions. The low temperature resonant PL spectroscopy reveals phonon-assisted excitonic recombination. At room temperature the samples formed from a-SiO/SiO2 SLs possess relatively high PL quantum yield (∼ 1%). The PL transients have non-exponential decay, which indicates the exciton energy transfer in nc-Si ensembles. The excitonic energy of Er-doped nc-Si SL structures can be almost completely transferred to Er ions incorporated in SiO2 matrix that results in a strong emission line at 0.81 eV.",

author = "Timoshenko, {V. Yu} and Shalygina, {O. A.} and Lisachenko, {M. G.} and Kashkarov, {P. K.} and D. Kovalev and J. Heitmann and M. Zacharias and Kamenev, {B. V.} and L. Tsybeskov",

year = "2003",

doi = "10.1557/proc-789-n11.2",

language = "English (US)",

volume = "789",

pages = "227--232",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Quantum Dots, Nanoparticles and Nanowires ; Conference date: 01-12-2003 Through 05-12-2003",

}

TY - JOUR

T1 - Exciton photoluminescence and energy transfer in nanocrystalline Si/ Si dioxide superlattice structures

AU - Timoshenko, V. Yu

AU - Shalygina, O. A.

AU - Lisachenko, M. G.

AU - Kashkarov, P. K.

AU - Kovalev, D.

AU - Heitmann, J.

AU - Zacharias, M.

AU - Kamenev, B. V.

AU - Tsybeskov, L.

PY - 2003

Y1 - 2003

N2 - Photoluminescence (PL) of nanocrystalline Si (nc-Si) assemblies formed by thermal crystallization of amorphous Si/SiO2 and SiO/SiO2 superlattices (SLs) has been investigated at different temperatures and excitation conditions. The low temperature resonant PL spectroscopy reveals phonon-assisted excitonic recombination. At room temperature the samples formed from a-SiO/SiO2 SLs possess relatively high PL quantum yield (∼ 1%). The PL transients have non-exponential decay, which indicates the exciton energy transfer in nc-Si ensembles. The excitonic energy of Er-doped nc-Si SL structures can be almost completely transferred to Er ions incorporated in SiO2 matrix that results in a strong emission line at 0.81 eV.

AB - Photoluminescence (PL) of nanocrystalline Si (nc-Si) assemblies formed by thermal crystallization of amorphous Si/SiO2 and SiO/SiO2 superlattices (SLs) has been investigated at different temperatures and excitation conditions. The low temperature resonant PL spectroscopy reveals phonon-assisted excitonic recombination. At room temperature the samples formed from a-SiO/SiO2 SLs possess relatively high PL quantum yield (∼ 1%). The PL transients have non-exponential decay, which indicates the exciton energy transfer in nc-Si ensembles. The excitonic energy of Er-doped nc-Si SL structures can be almost completely transferred to Er ions incorporated in SiO2 matrix that results in a strong emission line at 0.81 eV.

UR - http://www.scopus.com/inward/record.url?scp=2942648598&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2942648598&partnerID=8YFLogxK

U2 - 10.1557/proc-789-n11.2

DO - 10.1557/proc-789-n11.2

M3 - Conference article

AN - SCOPUS:2942648598

SN - 0272-9172

VL - 789

SP - 227

EP - 232

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Quantum Dots, Nanoparticles and Nanowires

Y2 - 1 December 2003 through 5 December 2003

ER -

Exciton photoluminescence and energy transfer in nanocrystalline Si/ Si dioxide superlattice structures

Abstract

All Science Journal Classification (ASJC) codes

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