Exciton photoluminescence and energy transfer in nanocrystalline Si/ Si dioxide superlattice structures

V. Yu Timoshenko; O. A. Shalygina; M. G. Lisachenko; P. K. Kashkarov; D. Kovalev; J. Heitmann; M. Zacharias; B. V. Kamenev; L. Tsybeskov

doi:10.1557/proc-789-n11.2

Exciton photoluminescence and energy transfer in nanocrystalline Si/ Si dioxide superlattice structures

V. Yu Timoshenko
, O. A. Shalygina
, M. G. Lisachenko
, P. K. Kashkarov
, D. Kovalev
, J. Heitmann
, M. Zacharias
, B. V. Kamenev
, L. Tsybeskov

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

Photoluminescence (PL) of nanocrystalline Si (nc-Si) assemblies formed by thermal crystallization of amorphous Si/SiO₂ and SiO/SiO₂ superlattices (SLs) has been investigated at different temperatures and excitation conditions. The low temperature resonant PL spectroscopy reveals phonon-assisted excitonic recombination. At room temperature the samples formed from a-SiO/SiO₂ SLs possess relatively high PL quantum yield (∼ 1%). The PL transients have non-exponential decay, which indicates the exciton energy transfer in nc-Si ensembles. The excitonic energy of Er-doped nc-Si SL structures can be almost completely transferred to Er ions incorporated in SiO₂ matrix that results in a strong emission line at 0.81 eV.

Original language	English (US)
Pages (from-to)	227-232
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	789
DOIs	https://doi.org/10.1557/proc-789-n11.2
State	Published - 2003
Event	Quantum Dots, Nanoparticles and Nanowires - Boston, MA, United States Duration: Dec 1 2003 → Dec 5 2003

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1557/proc-789-n11.2

Cite this

@article{7c2287d5fa114350a3eee88640165ba8,

title = "Exciton photoluminescence and energy transfer in nanocrystalline Si/ Si dioxide superlattice structures",

abstract = "Photoluminescence (PL) of nanocrystalline Si (nc-Si) assemblies formed by thermal crystallization of amorphous Si/SiO2 and SiO/SiO2 superlattices (SLs) has been investigated at different temperatures and excitation conditions. The low temperature resonant PL spectroscopy reveals phonon-assisted excitonic recombination. At room temperature the samples formed from a-SiO/SiO2 SLs possess relatively high PL quantum yield (∼ 1\%). The PL transients have non-exponential decay, which indicates the exciton energy transfer in nc-Si ensembles. The excitonic energy of Er-doped nc-Si SL structures can be almost completely transferred to Er ions incorporated in SiO2 matrix that results in a strong emission line at 0.81 eV.",

author = "Timoshenko, \{V. Yu\} and Shalygina, \{O. A.\} and Lisachenko, \{M. G.\} and Kashkarov, \{P. K.\} and D. Kovalev and J. Heitmann and M. Zacharias and Kamenev, \{B. V.\} and L. Tsybeskov",

year = "2003",

doi = "10.1557/proc-789-n11.2",

language = "English (US)",

volume = "789",

pages = "227--232",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Quantum Dots, Nanoparticles and Nanowires ; Conference date: 01-12-2003 Through 05-12-2003",

}

TY - JOUR

T1 - Exciton photoluminescence and energy transfer in nanocrystalline Si/ Si dioxide superlattice structures

AU - Timoshenko, V. Yu

AU - Shalygina, O. A.

AU - Lisachenko, M. G.

AU - Kashkarov, P. K.

AU - Kovalev, D.

AU - Heitmann, J.

AU - Zacharias, M.

AU - Kamenev, B. V.

AU - Tsybeskov, L.

PY - 2003

Y1 - 2003

N2 - Photoluminescence (PL) of nanocrystalline Si (nc-Si) assemblies formed by thermal crystallization of amorphous Si/SiO2 and SiO/SiO2 superlattices (SLs) has been investigated at different temperatures and excitation conditions. The low temperature resonant PL spectroscopy reveals phonon-assisted excitonic recombination. At room temperature the samples formed from a-SiO/SiO2 SLs possess relatively high PL quantum yield (∼ 1%). The PL transients have non-exponential decay, which indicates the exciton energy transfer in nc-Si ensembles. The excitonic energy of Er-doped nc-Si SL structures can be almost completely transferred to Er ions incorporated in SiO2 matrix that results in a strong emission line at 0.81 eV.

AB - Photoluminescence (PL) of nanocrystalline Si (nc-Si) assemblies formed by thermal crystallization of amorphous Si/SiO2 and SiO/SiO2 superlattices (SLs) has been investigated at different temperatures and excitation conditions. The low temperature resonant PL spectroscopy reveals phonon-assisted excitonic recombination. At room temperature the samples formed from a-SiO/SiO2 SLs possess relatively high PL quantum yield (∼ 1%). The PL transients have non-exponential decay, which indicates the exciton energy transfer in nc-Si ensembles. The excitonic energy of Er-doped nc-Si SL structures can be almost completely transferred to Er ions incorporated in SiO2 matrix that results in a strong emission line at 0.81 eV.

UR - https://www.scopus.com/pages/publications/2942648598

UR - https://www.scopus.com/pages/publications/2942648598#tab=citedBy

U2 - 10.1557/proc-789-n11.2

DO - 10.1557/proc-789-n11.2

M3 - Conference article

AN - SCOPUS:2942648598

SN - 0272-9172

VL - 789

SP - 227

EP - 232

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Quantum Dots, Nanoparticles and Nanowires

Y2 - 1 December 2003 through 5 December 2003

ER -

Exciton photoluminescence and energy transfer in nanocrystalline Si/ Si dioxide superlattice structures

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this