Experimental Analysis of HfO2/XReRAM devices by the Capacitance Measurements

Fernando J. Costa, Aseel Zeinati, Renan Trevisoli, D. Misra, Rodrigo T. Doria

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The main objective of this work is to present an analysis of the switching properties in Resistive Random-Access-Memory devices through the capacitance measurements of the metal-insulator-metal structure. The analysis was carried out in two devices with different insulating layers, one composed of H-plasma-Treated HfO2 and the other with a stoichiometric HfO2. The device with a higher quantity of oxygen vacancy related defects in the insulator (HfO2w}/trt}) presents a wider spread of the capacitance with the application of a range of varying pulse widths. An increase in the capacitance from 3.904 to 3.917 pF/\mu m}^{2 was observed for the same device when it was subjected to a 144 \mu s pulse width, demonstrating a conductance quantization required for the application in in-memory computing systems.

Original languageEnglish (US)
Title of host publication2023 IEEE Latin American Electron Devices Conference, LAEDC 2023
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350311907
DOIs
StatePublished - 2023
Event2023 IEEE Latin American Electron Devices Conference, LAEDC 2023 - Puebla, Mexico
Duration: Jul 3 2023Jul 5 2023

Publication series

Name2023 IEEE Latin American Electron Devices Conference, LAEDC 2023

Conference

Conference2023 IEEE Latin American Electron Devices Conference, LAEDC 2023
Country/TerritoryMexico
CityPuebla
Period7/3/237/5/23

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Keywords

  • Capacitance
  • Defects
  • H-Plasma treatment
  • MIM
  • Oxygen Vacancies
  • ReRAM

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