@inproceedings{5136f15080934e50ae16db5acdf23002,
title = "Experimental Analysis of HfO2/XReRAM devices by the Capacitance Measurements",
abstract = "The main objective of this work is to present an analysis of the switching properties in Resistive Random-Access-Memory devices through the capacitance measurements of the metal-insulator-metal structure. The analysis was carried out in two devices with different insulating layers, one composed of H-plasma-Treated HfO2 and the other with a stoichiometric HfO2. The device with a higher quantity of oxygen vacancy related defects in the insulator (HfO2w}/trt}) presents a wider spread of the capacitance with the application of a range of varying pulse widths. An increase in the capacitance from 3.904 to 3.917 pF/\mu m}^{2 was observed for the same device when it was subjected to a 144 \mu s pulse width, demonstrating a conductance quantization required for the application in in-memory computing systems.",
keywords = "Capacitance, Defects, H-Plasma treatment, MIM, Oxygen Vacancies, ReRAM",
author = "Costa, {Fernando J.} and Aseel Zeinati and Renan Trevisoli and D. Misra and Doria, {Rodrigo T.}",
note = "Funding Information: ACKONOWLEDGEMENTS This work was supported by National Council for Scientific and Technological Development (CNPq) grant #303938/2020-0 and financed in part by the Coordena{\c c}{\~a}o de Aperfei{\c c}oamento de Pessoal de N{\'i}vel Superior - Brasil (CAPES) - Finance Code 001. The authors would like to thank Drs. D.H. Triyoso, K. Tapily, R.D. Clark, S. Consiglio, S. Rogalskyj, K. Imakita, S. Lombardo, C.S. Wajda, and G.J. Leusink of TEL Technology Center, America, Albany, NY, for supplying the devices for this work and helpful discussions. Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 IEEE Latin American Electron Devices Conference, LAEDC 2023 ; Conference date: 03-07-2023 Through 05-07-2023",
year = "2023",
doi = "10.1109/LAEDC58183.2023.10209123",
language = "English (US)",
series = "2023 IEEE Latin American Electron Devices Conference, LAEDC 2023",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2023 IEEE Latin American Electron Devices Conference, LAEDC 2023",
address = "United States",
}