@inproceedings{5136f15080934e50ae16db5acdf23002,
title = "Experimental Analysis of HfO2/XReRAM devices by the Capacitance Measurements",
abstract = "The main objective of this work is to present an analysis of the switching properties in Resistive Random-Access-Memory devices through the capacitance measurements of the metal-insulator-metal structure. The analysis was carried out in two devices with different insulating layers, one composed of H-plasma-Treated HfO2 and the other with a stoichiometric HfO2. The device with a higher quantity of oxygen vacancy related defects in the insulator (HfO2w}/trt}) presents a wider spread of the capacitance with the application of a range of varying pulse widths. An increase in the capacitance from 3.904 to 3.917 pF/\mu m}^{2 was observed for the same device when it was subjected to a 144 \mu s pulse width, demonstrating a conductance quantization required for the application in in-memory computing systems.",
keywords = "Capacitance, Defects, H-Plasma treatment, MIM, Oxygen Vacancies, ReRAM",
author = "Costa, {Fernando J.} and Aseel Zeinati and Renan Trevisoli and D. Misra and Doria, {Rodrigo T.}",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 IEEE Latin American Electron Devices Conference, LAEDC 2023 ; Conference date: 03-07-2023 Through 05-07-2023",
year = "2023",
doi = "10.1109/LAEDC58183.2023.10209123",
language = "English (US)",
series = "2023 IEEE Latin American Electron Devices Conference, LAEDC 2023",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2023 IEEE Latin American Electron Devices Conference, LAEDC 2023",
address = "United States",
}