Experimental Analysis of HfO_2/XReRAM devices by the Capacitance Measurements

Keyphrases

• HfO2 100%
• Capacitance Measurement 100%
• Capacitance 66%
• Pulse Width 66%
• Memory Device 33%
• In-memory Computing 33%
• Resistive Random Access Memory (ReRAM) 33%
• Insulator 33%
• Oxygen Vacancy 33%
• Plasma Treatment 33%
• Switching Properties 33%
• Vacancy Defects 33%
• Conductance Quantization 33%
• Insulating Layer 33%
• Metal-insulator-metal Structure 33%
• H Plasma 33%

Material Science

• Capacitance 100%
• Capacitance Measurement 100%
• Resistive Random-Access Memory 50%
• Oxygen Vacancy 50%
• Metal-Insulator-Metal Structure 50%