Experimental Characterization of Switching Properties of ReRAM Devices by the Capacitance Measurements

Fernando J. Costa, Aseel Zeinati, Renan Trevisoli, D. Misra, Rodrigo T. Doria

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper aims to present for the first time an analysis of the switching properties of Resistive Random-Access-Memory devices in relation to the capacitance variation of the Metal-Insulator-Metal structure. A capacitance spread was observed when a set of pulses with varying widths and amplitudes was applied to operate the devices in the Multi-Level-Cell regime. The devices demonstrate an increase in the capacitance from 2.0338 to 2.0344 pF/μm2 from the pristine state to the maximum pulse width increment. This allows the devices to exhibit multiple capacitive reactance states, demonstrating the quantization of the conductance, required for the application in in-memory computing systems.

Original languageEnglish (US)
Title of host publication2023 37th Symposium on Microelectronics Technology and Devices, SBMicro 2023
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350319453
DOIs
StatePublished - 2023
Event37th Symposium on Microelectronics Technology and Devices, SBMicro 2023 - Rio de Janeiro, Brazil
Duration: Aug 28 2023Sep 1 2023

Publication series

Name2023 37th Symposium on Microelectronics Technology and Devices, SBMicro 2023

Conference

Conference37th Symposium on Microelectronics Technology and Devices, SBMicro 2023
Country/TerritoryBrazil
CityRio de Janeiro
Period8/28/239/1/23

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

Keywords

  • Capacitance
  • MIM
  • Multi-level Cell
  • ReRAM
  • Resistance

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