Extraordinary crystallization of amorphous Si/SiO2 superlattices

M. Zacharias; J. Bläsing; K. Hirschman; L. Tsybeskov; P. M. Fauchet

doi:10.1016/s0022-3093(00)00033-8

Extraordinary crystallization of amorphous Si/SiO₂ superlattices

M. Zacharias, J. Bläsing, K. Hirschman, L. Tsybeskov, P. M. Fauchet

Research output: Contribution to journal › Conference article › peer-review

24 Scopus citations

Abstract

Ordered Si crystals with nanometer sizes are prepared in a Si/SiO₂ superlattice structure using rf sputtering and plasma oxidation. Decreasing the a-Si layer thickness to 1.9 nm increases the inhomogeneous strain by one order of magnitude. An exponential increase of the crystallization temperature with decreasing thickness is found. A new model using the melting temperature and the interior amorphous crystallization temperature is reported. The extension of the model to Ge/SiO₂ and Si/SiO_x superlattices is demonstrated.

Original language	English (US)
Pages (from-to)	640-644
Number of pages	5
Journal	Journal of Non-Crystalline Solids
Volume	266-269 A
DOIs	https://doi.org/10.1016/s0022-3093(00)00033-8
State	Published - May 1 2000
Externally published	Yes
Event	18th International Conference on Amorphous and Microcrystalline Semiconductors - Sicence and Technology (ICAMS 18) - Snowbird, UT, United States Duration: Aug 23 1999 → Aug 27 1999

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

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10.1016/s0022-3093(00)00033-8

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title = "Extraordinary crystallization of amorphous Si/SiO2 superlattices",

abstract = "Ordered Si crystals with nanometer sizes are prepared in a Si/SiO2 superlattice structure using rf sputtering and plasma oxidation. Decreasing the a-Si layer thickness to 1.9 nm increases the inhomogeneous strain by one order of magnitude. An exponential increase of the crystallization temperature with decreasing thickness is found. A new model using the melting temperature and the interior amorphous crystallization temperature is reported. The extension of the model to Ge/SiO2 and Si/SiOx superlattices is demonstrated.",

author = "M. Zacharias and J. Bl{\"a}sing and K. Hirschman and L. Tsybeskov and Fauchet, {P. M.}",

note = "Funding Information: Financial support by the Deutsche Forschungsgemeinschaft, and the Kultusministerium of Sachsen-Anhalt is gratefully acknowledged.; 18th International Conference on Amorphous and Microcrystalline Semiconductors - Sicence and Technology (ICAMS 18) ; Conference date: 23-08-1999 Through 27-08-1999",

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doi = "10.1016/s0022-3093(00)00033-8",

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volume = "266-269 A",

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journal = "Journal of Non-Crystalline Solids",

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publisher = "Elsevier",

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TY - JOUR

T1 - Extraordinary crystallization of amorphous Si/SiO2 superlattices

AU - Zacharias, M.

AU - Bläsing, J.

AU - Hirschman, K.

AU - Tsybeskov, L.

AU - Fauchet, P. M.

N1 - Funding Information: Financial support by the Deutsche Forschungsgemeinschaft, and the Kultusministerium of Sachsen-Anhalt is gratefully acknowledged.

PY - 2000/5/1

Y1 - 2000/5/1

N2 - Ordered Si crystals with nanometer sizes are prepared in a Si/SiO2 superlattice structure using rf sputtering and plasma oxidation. Decreasing the a-Si layer thickness to 1.9 nm increases the inhomogeneous strain by one order of magnitude. An exponential increase of the crystallization temperature with decreasing thickness is found. A new model using the melting temperature and the interior amorphous crystallization temperature is reported. The extension of the model to Ge/SiO2 and Si/SiOx superlattices is demonstrated.

AB - Ordered Si crystals with nanometer sizes are prepared in a Si/SiO2 superlattice structure using rf sputtering and plasma oxidation. Decreasing the a-Si layer thickness to 1.9 nm increases the inhomogeneous strain by one order of magnitude. An exponential increase of the crystallization temperature with decreasing thickness is found. A new model using the melting temperature and the interior amorphous crystallization temperature is reported. The extension of the model to Ge/SiO2 and Si/SiOx superlattices is demonstrated.

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U2 - 10.1016/s0022-3093(00)00033-8

DO - 10.1016/s0022-3093(00)00033-8

M3 - Conference article

AN - SCOPUS:0001495605

SN - 0022-3093

VL - 266-269 A

SP - 640

EP - 644

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

T2 - 18th International Conference on Amorphous and Microcrystalline Semiconductors - Sicence and Technology (ICAMS 18)

Y2 - 23 August 1999 through 27 August 1999

ER -

Extraordinary crystallization of amorphous Si/SiO₂ superlattices

Abstract

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