Extraordinary crystallization of amorphous Si/SiO2 superlattices

M. Zacharias, J. Bläsing, K. Hirschman, L. Tsybeskov, P. M. Fauchet

Research output: Contribution to journalConference articlepeer-review

21 Scopus citations

Abstract

Ordered Si crystals with nanometer sizes are prepared in a Si/SiO2 superlattice structure using rf sputtering and plasma oxidation. Decreasing the a-Si layer thickness to 1.9 nm increases the inhomogeneous strain by one order of magnitude. An exponential increase of the crystallization temperature with decreasing thickness is found. A new model using the melting temperature and the interior amorphous crystallization temperature is reported. The extension of the model to Ge/SiO2 and Si/SiOx superlattices is demonstrated.

Original languageEnglish (US)
Pages (from-to)640-644
Number of pages5
JournalJournal of Non-Crystalline Solids
Volume266-269 A
DOIs
StatePublished - May 1 2000
Externally publishedYes
Event18th International Conference on Amorphous and Microcrystalline Semiconductors - Sicence and Technology (ICAMS 18) - Snowbird, UT, United States
Duration: Aug 23 1999Aug 27 1999

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Extraordinary crystallization of amorphous Si/SiO<sub>2</sub> superlattices'. Together they form a unique fingerprint.

Cite this