Fabrication of nanocrystalline silicon superlattices by controlled thermal recrystallization

L. Tsybeskov, K. D. Hirschman, S. P. Duttagupta, P. M. Fauchet, M. Zacharias, J. P. Mccaffrey, D. J. Lockwood

Research output: Contribution to journalArticlepeer-review

32 Scopus citations

Abstract

We report the fabrication of nanocrystalline Si superlattices by plasma-assisted chemical vapor deposition (PECVD) or magnetron sputtering of nanometer-thick amorphous Si (a-Si) layers followed by high-temperature recrystallization. The recrystallization is performed in two steps (rapid thermal pulse annealing and slow ramp-up furnace annealing) and has been monitored by Raman scattering. The fabrication technique is able to control the size and packing density of Si nanocrystals in the nc-Si/SiO2 superlattices. Preliminary results on the doping of Si nanocrystals are discussed. Room temperature photoluminescence with a quantum efficiency of 0.3% is demonstrated.

Original languageEnglish (US)
Pages (from-to)69-77
Number of pages9
JournalPhysica Status Solidi (A) Applied Research
Volume165
Issue number1
DOIs
StatePublished - Jan 1998
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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