Fabrication of nanocrystalline silicon superlattices by controlled thermal recrystallization

L. Tsybeskov; K. D. Hirschman; S. P. Duttagupta; P. M. Fauchet; M. Zacharias; J. P. Mccaffrey; D. J. Lockwood

doi:10.1002/(SICI)1521-396X(199801)165:1<69::AID-PSSA69>3.0.CO;2-H

Fabrication of nanocrystalline silicon superlattices by controlled thermal recrystallization

L. Tsybeskov, K. D. Hirschman, S. P. Duttagupta, P. M. Fauchet, M. Zacharias, J. P. Mccaffrey, D. J. Lockwood

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

We report the fabrication of nanocrystalline Si superlattices by plasma-assisted chemical vapor deposition (PECVD) or magnetron sputtering of nanometer-thick amorphous Si (a-Si) layers followed by high-temperature recrystallization. The recrystallization is performed in two steps (rapid thermal pulse annealing and slow ramp-up furnace annealing) and has been monitored by Raman scattering. The fabrication technique is able to control the size and packing density of Si nanocrystals in the nc-Si/SiO₂ superlattices. Preliminary results on the doping of Si nanocrystals are discussed. Room temperature photoluminescence with a quantum efficiency of 0.3% is demonstrated.

Original language	English (US)
Pages (from-to)	69-77
Number of pages	9
Journal	Physica Status Solidi (A) Applied Research
Volume	165
Issue number	1
DOIs	https://doi.org/10.1002/(SICI)1521-396X(199801)165:1<69::AID-PSSA69>3.0.CO;2-H
State	Published - Jan 1998
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/(SICI)1521-396X(199801)165:1<69::AID-PSSA69>3.0.CO;2-H

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title = "Fabrication of nanocrystalline silicon superlattices by controlled thermal recrystallization",

abstract = "We report the fabrication of nanocrystalline Si superlattices by plasma-assisted chemical vapor deposition (PECVD) or magnetron sputtering of nanometer-thick amorphous Si (a-Si) layers followed by high-temperature recrystallization. The recrystallization is performed in two steps (rapid thermal pulse annealing and slow ramp-up furnace annealing) and has been monitored by Raman scattering. The fabrication technique is able to control the size and packing density of Si nanocrystals in the nc-Si/SiO2 superlattices. Preliminary results on the doping of Si nanocrystals are discussed. Room temperature photoluminescence with a quantum efficiency of 0.3% is demonstrated.",

author = "L. Tsybeskov and Hirschman, {K. D.} and Duttagupta, {S. P.} and Fauchet, {P. M.} and M. Zacharias and Mccaffrey, {J. P.} and Lockwood, {D. J.}",

year = "1998",

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doi = "10.1002/(SICI)1521-396X(199801)165:1<69::AID-PSSA69>3.0.CO;2-H",

language = "English (US)",

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journal = "Physica Status Solidi (A) Applied Research",

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T1 - Fabrication of nanocrystalline silicon superlattices by controlled thermal recrystallization

AU - Tsybeskov, L.

AU - Hirschman, K. D.

AU - Duttagupta, S. P.

AU - Fauchet, P. M.

AU - Zacharias, M.

AU - Mccaffrey, J. P.

AU - Lockwood, D. J.

PY - 1998/1

Y1 - 1998/1

N2 - We report the fabrication of nanocrystalline Si superlattices by plasma-assisted chemical vapor deposition (PECVD) or magnetron sputtering of nanometer-thick amorphous Si (a-Si) layers followed by high-temperature recrystallization. The recrystallization is performed in two steps (rapid thermal pulse annealing and slow ramp-up furnace annealing) and has been monitored by Raman scattering. The fabrication technique is able to control the size and packing density of Si nanocrystals in the nc-Si/SiO2 superlattices. Preliminary results on the doping of Si nanocrystals are discussed. Room temperature photoluminescence with a quantum efficiency of 0.3% is demonstrated.

AB - We report the fabrication of nanocrystalline Si superlattices by plasma-assisted chemical vapor deposition (PECVD) or magnetron sputtering of nanometer-thick amorphous Si (a-Si) layers followed by high-temperature recrystallization. The recrystallization is performed in two steps (rapid thermal pulse annealing and slow ramp-up furnace annealing) and has been monitored by Raman scattering. The fabrication technique is able to control the size and packing density of Si nanocrystals in the nc-Si/SiO2 superlattices. Preliminary results on the doping of Si nanocrystals are discussed. Room temperature photoluminescence with a quantum efficiency of 0.3% is demonstrated.

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Fabrication of nanocrystalline silicon superlattices by controlled thermal recrystallization

Abstract

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