TY - JOUR
T1 - Fabrication of Phosphor-Free III-Nitride Nanowire Light-Emitting Diodes on Metal Substrates for Flexible Photonics
AU - Rajan Philip, Moab
AU - Choudhary, Dipayan Datta
AU - Djavid, Mehrdad
AU - Bhuyian, Md Nasiruddin
AU - Bui, Thang Ha Quoc
AU - Misra, Durgamadhab
AU - Khreishah, Abdallah
AU - Piao, James
AU - Nguyen, Hoang Duy
AU - Le, Khai Quang
AU - Nguyen, Hieu Pham Trung
N1 - Publisher Copyright:
© 2017 American Chemical Society.
PY - 2017/9/30
Y1 - 2017/9/30
N2 - In this paper, we report our study on high-performance III-nitride nanowire light-emitting diodes (LEDs) on copper (Cu) substrates via the substrate-transfer process. Nanowire LED structures were first grown on silicon-on-insulator (SOI) substrates by molecular beam epitaxy. Subsequently, the SOI substrate was removed by combining dry- and wet-etching processes. Compared to conventional nanowire LEDs on Si, the nanowire LEDs on Cu exhibit several advantages, including more efficient thermal management and enhanced light-extraction efficiency (LEE) because of the usage of metal reflectors and highly thermally conductive metal substrates. The LED on Cu, therefore, has stronger photoluminescence, electroluminescence intensities, and better current-voltage characteristics compared to the conventional nanowire LED on Si. Our simulation results further confirm the improved device performance of LEDs on Cu, compared to LEDs on Si. The LEE of the nanowire LED on Cu is nine times higher than that of the LED on Si at the same nanowire radius of 60 nm and spacing of 130 nm. Moreover, by engineering the device-active region, we achieved high-brightness phosphor-free LEDs on Cu with highly stable white-light emission and high color-rendering index of ∼95, showing their promising applications in general lighting, flexible displays, and wearable applications.
AB - In this paper, we report our study on high-performance III-nitride nanowire light-emitting diodes (LEDs) on copper (Cu) substrates via the substrate-transfer process. Nanowire LED structures were first grown on silicon-on-insulator (SOI) substrates by molecular beam epitaxy. Subsequently, the SOI substrate was removed by combining dry- and wet-etching processes. Compared to conventional nanowire LEDs on Si, the nanowire LEDs on Cu exhibit several advantages, including more efficient thermal management and enhanced light-extraction efficiency (LEE) because of the usage of metal reflectors and highly thermally conductive metal substrates. The LED on Cu, therefore, has stronger photoluminescence, electroluminescence intensities, and better current-voltage characteristics compared to the conventional nanowire LED on Si. Our simulation results further confirm the improved device performance of LEDs on Cu, compared to LEDs on Si. The LEE of the nanowire LED on Cu is nine times higher than that of the LED on Si at the same nanowire radius of 60 nm and spacing of 130 nm. Moreover, by engineering the device-active region, we achieved high-brightness phosphor-free LEDs on Cu with highly stable white-light emission and high color-rendering index of ∼95, showing their promising applications in general lighting, flexible displays, and wearable applications.
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U2 - 10.1021/acsomega.7b00843
DO - 10.1021/acsomega.7b00843
M3 - Article
AN - SCOPUS:85048039551
SN - 2470-1343
VL - 2
SP - 5708
EP - 5714
JO - ACS Omega
JF - ACS Omega
IS - 9
ER -