Fabrication of self-aligned gated field emitters

D. Liu, T. S. Ravi, B. G. Bagley, K. K. Chin, R. B. Marcus

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Reports a new self-aligned process to form gated field emitters including an evaluation of dielectrics and field emission measurements. This process offers advantages including gate opening control down to 0.25 mu m diameter without electron-beam writing assistance, a planar structure, and thick dielectric for capacitance reduction. The current-voltage characterization of the gated field emitter follows Fowler-Nordheim behavior. Leakage characteristics of various dielectric materials are measured and described.

Original languageEnglish (US)
Article number005
Pages (from-to)21-24
Number of pages4
JournalJournal of Micromechanics and Microengineering
Volume2
Issue number1
DOIs
StatePublished - Dec 1 1992

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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