Abstract
Reports a new self-aligned process to form gated field emitters including an evaluation of dielectrics and field emission measurements. This process offers advantages including gate opening control down to 0.25 mu m diameter without electron-beam writing assistance, a planar structure, and thick dielectric for capacitance reduction. The current-voltage characterization of the gated field emitter follows Fowler-Nordheim behavior. Leakage characteristics of various dielectric materials are measured and described.
| Original language | English (US) |
|---|---|
| Article number | 005 |
| Pages (from-to) | 21-24 |
| Number of pages | 4 |
| Journal | Journal of Micromechanics and Microengineering |
| Volume | 2 |
| Issue number | 1 |
| DOIs | |
| State | Published - 1992 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering