Fabrication of wedge-shaped silicon field emitters with nm-scale radii

D. Liu, T. S. Ravi, T. Gmitter, C. Y. Chen, R. B. Marcus, Ken Chin

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Wedge-shaped field emitters may have some advantages over conical tip emitters as electron sources in vacuum microelectronic devices. A method has been developed to make atomically sharp wedge-shaped silicon through use of dry etching and dry oxidation. Transmission electron microscopy studies show that silicon wedge emitters can be made with wedge radius and angle at 1 nm and 60°, respectively, by repeated oxidation in oxygen at 950°C.

Original languageEnglish (US)
Pages (from-to)1042-1043
Number of pages2
JournalApplied Physics Letters
Volume58
Issue number10
DOIs
StatePublished - Dec 1 1991

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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