Fabrication of wedge-shaped silicon field emitters with nm-scale radii

D. Liu; T. S. Ravi; T. Gmitter; C. Y. Chen; R. B. Marcus; K. Chin

doi:10.1063/1.104417

Fabrication of wedge-shaped silicon field emitters with nm-scale radii

D. Liu, T. S. Ravi, T. Gmitter, C. Y. Chen, R. B. Marcus, K. Chin

Research output: Contribution to journal › Article › peer-review

Abstract

Wedge-shaped field emitters may have some advantages over conical tip emitters as electron sources in vacuum microelectronic devices. A method has been developed to make atomically sharp wedge-shaped silicon through use of dry etching and dry oxidation. Transmission electron microscopy studies show that silicon wedge emitters can be made with wedge radius and angle at 1 nm and 60°, respectively, by repeated oxidation in oxygen at 950°C.

Original language	English (US)
Pages (from-to)	1042-1043
Number of pages	2
Journal	Applied Physics Letters
Volume	58
Issue number	10
DOIs	https://doi.org/10.1063/1.104417
State	Published - 1991

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.104417

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abstract = "Wedge-shaped field emitters may have some advantages over conical tip emitters as electron sources in vacuum microelectronic devices. A method has been developed to make atomically sharp wedge-shaped silicon through use of dry etching and dry oxidation. Transmission electron microscopy studies show that silicon wedge emitters can be made with wedge radius and angle at 1 nm and 60°, respectively, by repeated oxidation in oxygen at 950°C.",

author = "D. Liu and Ravi, {T. S.} and T. Gmitter and Chen, {C. Y.} and Marcus, {R. B.} and K. Chin",

year = "1991",

doi = "10.1063/1.104417",

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publisher = "American Institute of Physics Publising LLC",

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AU - Liu, D.

AU - Ravi, T. S.

AU - Gmitter, T.

AU - Chen, C. Y.

AU - Marcus, R. B.

AU - Chin, K.

PY - 1991

Y1 - 1991

N2 - Wedge-shaped field emitters may have some advantages over conical tip emitters as electron sources in vacuum microelectronic devices. A method has been developed to make atomically sharp wedge-shaped silicon through use of dry etching and dry oxidation. Transmission electron microscopy studies show that silicon wedge emitters can be made with wedge radius and angle at 1 nm and 60°, respectively, by repeated oxidation in oxygen at 950°C.

AB - Wedge-shaped field emitters may have some advantages over conical tip emitters as electron sources in vacuum microelectronic devices. A method has been developed to make atomically sharp wedge-shaped silicon through use of dry etching and dry oxidation. Transmission electron microscopy studies show that silicon wedge emitters can be made with wedge radius and angle at 1 nm and 60°, respectively, by repeated oxidation in oxygen at 950°C.

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Fabrication of wedge-shaped silicon field emitters with nm-scale radii

Abstract

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