Wedge-shaped field emitters may have some advantages over conical tip emitters as electron sources in vacuum microelectronic devices. A method has been developed to make atomically sharp wedge-shaped silicon through use of dry etching and dry oxidation. Transmission electron microscopy studies show that silicon wedge emitters can be made with wedge radius and angle at 1 nm and 60°, respectively, by repeated oxidation in oxygen at 950°C.
|Original language||English (US)|
|Number of pages||2|
|Journal||Applied Physics Letters|
|State||Published - 1991|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)