Far-infrared-magneto-optic ellipsometry characterization of free-charge-carrier properties in highly disordered n-type Al0.19Ga0.33In0.48P

T. Hofmann; M. Schubert; C. M. Herzinger; I. Pietzonka

doi:10.1063/1.1578162

Far-infrared-magneto-optic ellipsometry characterization of free-charge-carrier properties in highly disordered n-type Al_0.19Ga_0.33In_0.48P

T. Hofmann
, M. Schubert
, C. M. Herzinger
, I. Pietzonka

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

Free-charge-carrier properties of highly disordered n-type Al_0.19Ga_0.33In_0.48P were discussed. Far-infrared-magneto-optic ellipsometry was used. The room-temperature free-charge-carrier parameters effective mass, concentration and mobility were also studied by using magneto-optic birefringence.

Original language	English (US)
Pages (from-to)	3463-3465
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	20
DOIs	https://doi.org/10.1063/1.1578162
State	Published - May 19 2003
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1578162

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title = "Far-infrared-magneto-optic ellipsometry characterization of free-charge-carrier properties in highly disordered n-type Al0.19Ga0.33In0.48P",

abstract = "Free-charge-carrier properties of highly disordered n-type Al0.19Ga0.33In0.48P were discussed. Far-infrared-magneto-optic ellipsometry was used. The room-temperature free-charge-carrier parameters effective mass, concentration and mobility were also studied by using magneto-optic birefringence.",

author = "T. Hofmann and M. Schubert and Herzinger, \{C. M.\} and I. Pietzonka",

year = "2003",

month = may,

day = "19",

doi = "10.1063/1.1578162",

language = "English (US)",

volume = "82",

pages = "3463--3465",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Far-infrared-magneto-optic ellipsometry characterization of free-charge-carrier properties in highly disordered n-type Al0.19Ga0.33In0.48P

AU - Hofmann, T.

AU - Schubert, M.

AU - Herzinger, C. M.

AU - Pietzonka, I.

PY - 2003/5/19

Y1 - 2003/5/19

N2 - Free-charge-carrier properties of highly disordered n-type Al0.19Ga0.33In0.48P were discussed. Far-infrared-magneto-optic ellipsometry was used. The room-temperature free-charge-carrier parameters effective mass, concentration and mobility were also studied by using magneto-optic birefringence.

AB - Free-charge-carrier properties of highly disordered n-type Al0.19Ga0.33In0.48P were discussed. Far-infrared-magneto-optic ellipsometry was used. The room-temperature free-charge-carrier parameters effective mass, concentration and mobility were also studied by using magneto-optic birefringence.

UR - https://www.scopus.com/pages/publications/0037981576

UR - https://www.scopus.com/pages/publications/0037981576#tab=citedBy

U2 - 10.1063/1.1578162

DO - 10.1063/1.1578162

M3 - Article

AN - SCOPUS:0037981576

SN - 0003-6951

VL - 82

SP - 3463

EP - 3465

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

ER -

Far-infrared-magneto-optic ellipsometry characterization of free-charge-carrier properties in highly disordered n-type Al_0.19Ga_0.33In_0.48P

Abstract

All Science Journal Classification (ASJC) codes

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