Far infrared studies of silicon using terahertz spectroscopy

Amartya Sengupta, Aparajita Bandyopadhyay, John F. Federici, Nuggehalli M. Ravindra

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

In this work, the optical properties of p- type silicon wafers, of various thicknesses, have been studied in the frequency range of 0.2 - 1.2 THz. It is seen that, for low resistivity silicon, the optical properties are dominated by the presence of dopants. The analysis technique deployed in the present work explores a general iterative procedure to determine the real and imaginary parts of the complex dielectric constant without utilizing Kramers-Kronig relationships. This study not only holds scientific relevance in material science but also opens up rich avenues for novel applications of terahertz spectroscopy to semiconductors.

Original languageEnglish (US)
Title of host publicationMaterials Science and Technology 2005 - Proceedings of the Conference
Pages39-48
Number of pages10
StatePublished - 2005
EventMaterials Science and Technology 2005 Conference - Pittsburgh, PA, United States
Duration: Sep 25 2005Sep 28 2005

Publication series

NameMaterials Science and Technology
Volume4
ISSN (Print)1546-2498

Other

OtherMaterials Science and Technology 2005 Conference
CountryUnited States
CityPittsburgh, PA
Period9/25/059/28/05

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Keywords

  • Characterization
  • Electronic materials
  • Terahertz spectroscopy

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