Fast and intense photoluminescence in a SiGe nano-layer embedded in multilayers of Si/SiGe clusters

S. A. Mala; L. Tsybeskov; D. J. Lockwood; X. Wu; J. M. Baribeau

doi:10.1063/1.4813560

Fast and intense photoluminescence in a SiGe nano-layer embedded in multilayers of Si/SiGe clusters

S. A. Mala, L. Tsybeskov, D. J. Lockwood, X. Wu, J. M. Baribeau

Electrical and Computer Engineering

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11 Scopus citations

Abstract

An intense photoluminescence (PL) peaking near 0.9 eV is emitted by a single Si_1-xGe_x nanometer-thick layer (NL) with x ≈ 8% incorporated into Si/Si_0.6Ge_0.4 cluster multilayers (CMs). The SiGe NL PL does not saturate in output intensity with up to 50 mJ/cm ² of excitation energy density, and it has nearly a 1000 times shorter lifetime compared to CM PL, which peaks at ∼0.8 eV. These dramatic differences in observed PL properties are attributed to different compositions and structures of the Si/SiGe NL and CM hetero-interfaces.

Original language	English (US)
Article number	033103
Journal	Applied Physics Letters
Volume	103
Issue number	3
DOIs	https://doi.org/10.1063/1.4813560
State	Published - Jul 15 2013

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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title = "Fast and intense photoluminescence in a SiGe nano-layer embedded in multilayers of Si/SiGe clusters",

abstract = "An intense photoluminescence (PL) peaking near 0.9 eV is emitted by a single Si1-xGex nanometer-thick layer (NL) with x ≈ 8% incorporated into Si/Si0.6Ge0.4 cluster multilayers (CMs). The SiGe NL PL does not saturate in output intensity with up to 50 mJ/cm 2 of excitation energy density, and it has nearly a 1000 times shorter lifetime compared to CM PL, which peaks at ∼0.8 eV. These dramatic differences in observed PL properties are attributed to different compositions and structures of the Si/SiGe NL and CM hetero-interfaces.",

author = "Mala, {S. A.} and L. Tsybeskov and Lockwood, {D. J.} and X. Wu and Baribeau, {J. M.}",

note = "Funding Information: This work was partially supported by NSF Grant No. 1005682 and Foundation at NJIT.",

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doi = "10.1063/1.4813560",

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T1 - Fast and intense photoluminescence in a SiGe nano-layer embedded in multilayers of Si/SiGe clusters

AU - Mala, S. A.

AU - Tsybeskov, L.

AU - Lockwood, D. J.

AU - Wu, X.

AU - Baribeau, J. M.

N1 - Funding Information: This work was partially supported by NSF Grant No. 1005682 and Foundation at NJIT.

PY - 2013/7/15

Y1 - 2013/7/15

N2 - An intense photoluminescence (PL) peaking near 0.9 eV is emitted by a single Si1-xGex nanometer-thick layer (NL) with x ≈ 8% incorporated into Si/Si0.6Ge0.4 cluster multilayers (CMs). The SiGe NL PL does not saturate in output intensity with up to 50 mJ/cm 2 of excitation energy density, and it has nearly a 1000 times shorter lifetime compared to CM PL, which peaks at ∼0.8 eV. These dramatic differences in observed PL properties are attributed to different compositions and structures of the Si/SiGe NL and CM hetero-interfaces.

AB - An intense photoluminescence (PL) peaking near 0.9 eV is emitted by a single Si1-xGex nanometer-thick layer (NL) with x ≈ 8% incorporated into Si/Si0.6Ge0.4 cluster multilayers (CMs). The SiGe NL PL does not saturate in output intensity with up to 50 mJ/cm 2 of excitation energy density, and it has nearly a 1000 times shorter lifetime compared to CM PL, which peaks at ∼0.8 eV. These dramatic differences in observed PL properties are attributed to different compositions and structures of the Si/SiGe NL and CM hetero-interfaces.

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DO - 10.1063/1.4813560

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ER -

Fast and intense photoluminescence in a SiGe nano-layer embedded in multilayers of Si/SiGe clusters

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