Fast and intense photoluminescence in a SiGe nano-layer embedded in multilayers of Si/SiGe clusters

S. A. Mala, L. Tsybeskov, D. J. Lockwood, X. Wu, J. M. Baribeau

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Abstract

An intense photoluminescence (PL) peaking near 0.9 eV is emitted by a single Si1-xGex nanometer-thick layer (NL) with x ≈ 8% incorporated into Si/Si0.6Ge0.4 cluster multilayers (CMs). The SiGe NL PL does not saturate in output intensity with up to 50 mJ/cm 2 of excitation energy density, and it has nearly a 1000 times shorter lifetime compared to CM PL, which peaks at ∼0.8 eV. These dramatic differences in observed PL properties are attributed to different compositions and structures of the Si/SiGe NL and CM hetero-interfaces.

Original languageEnglish (US)
Article number033103
JournalApplied Physics Letters
Volume103
Issue number3
DOIs
StatePublished - Jul 15 2013

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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