@inproceedings{4ce7f23334d04d9b8d754000cf8d969d,
title = "Fast light-emitting silicon-germanium nanostructures",
abstract = "Epitaxially-grown three-dimensional Si/SiGe nanostructures produce photoluminescence and electroluminescence in the desired spectral range of 1.3-1.6 μm. We show that by controlling and modifying such Ge-rich SiGe nanoclusters during growth it is possible to fabricate very fast and hence more efficient SiGe light-emitting devices. Models for the physics of carrier recombination in these Si/SiGe nanostructures are presented, and a new route toward CMOS compatible light emitters is proposed.",
author = "Lockwood, {D. J.} and X. Wu and Baribeau, {J. M.} and N. Modi and L. Tsybeskov",
year = "2012",
doi = "10.1149/1.3700407",
language = "English (US)",
isbn = "9781566779579",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "5",
pages = "31--42",
booktitle = "Nanoscale Luminescent Materials 2",
edition = "5",
note = "2nd International Symposium on Nanoscale Luminescent Materials - 221st ECS Meeting ; Conference date: 06-05-2012 Through 10-05-2012",
}