Fast light-emitting silicon-germanium nanostructures

D. J. Lockwood, X. Wu, J. M. Baribeau, N. Modi, L. Tsybeskov

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Epitaxially-grown three-dimensional Si/SiGe nanostructures produce photoluminescence and electroluminescence in the desired spectral range of 1.3-1.6 μm. We show that by controlling and modifying such Ge-rich SiGe nanoclusters during growth it is possible to fabricate very fast and hence more efficient SiGe light-emitting devices. Models for the physics of carrier recombination in these Si/SiGe nanostructures are presented, and a new route toward CMOS compatible light emitters is proposed.

Original languageEnglish (US)
Title of host publicationNanoscale Luminescent Materials 2
PublisherElectrochemical Society Inc.
Number of pages12
ISBN (Electronic)9781607683155
ISBN (Print)9781566779579
StatePublished - 2012
Event2nd International Symposium on Nanoscale Luminescent Materials - 221st ECS Meeting - Seattle, WA, United States
Duration: May 6 2012May 10 2012

Publication series

NameECS Transactions
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737


Other2nd International Symposium on Nanoscale Luminescent Materials - 221st ECS Meeting
Country/TerritoryUnited States
CitySeattle, WA

All Science Journal Classification (ASJC) codes

  • General Engineering


Dive into the research topics of 'Fast light-emitting silicon-germanium nanostructures'. Together they form a unique fingerprint.

Cite this