Fast light-emitting silicon-germanium nanostructures

D. J. Lockwood, X. Wu, J. M. Baribeau, N. Modi, L. Tsybeskov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Epitaxially-grown three-dimensional Si/SiGe nanostructures produce photoluminescence and electroluminescence in the desired spectral range of 1.3-1.6 μm. We show that by controlling and modifying such Ge-rich SiGe nanoclusters during growth it is possible to fabricate very fast and hence more efficient SiGe light-emitting devices. Models for the physics of carrier recombination in these Si/SiGe nanostructures are presented, and a new route toward CMOS compatible light emitters is proposed.

Original languageEnglish (US)
Title of host publicationNanoscale Luminescent Materials 2
Pages31-42
Number of pages12
Edition5
DOIs
StatePublished - 2012
Event2nd International Symposium on Nanoscale Luminescent Materials - 221st ECS Meeting - Seattle, WA, United States
Duration: May 6 2012May 10 2012

Publication series

NameECS Transactions
Number5
Volume45
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other2nd International Symposium on Nanoscale Luminescent Materials - 221st ECS Meeting
CountryUnited States
CitySeattle, WA
Period5/6/125/10/12

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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