Fast Light-Emitting Silicon-Germanium Nanostructures

David J. Lockwood; Leonid Tsybeskov

doi:10.1109/JSTQE.2013.2292878

Fast Light-Emitting Silicon-Germanium Nanostructures

David J. Lockwood, Leonid Tsybeskov

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Results obtained from photoluminescence (PL) measurements performed on Si/Si_1-xGe_x nanostructures with a single Si_1-xGe_x nanometer-thick layer (NL) incorporated into Si/Si_0.6Ge_0.4 cluster multilayers (CMs) are reviewed. By employing depth-dependent pulsed laser excitation, the SiGe NL PL decay is found to be nearly a 1000 times faster compared to that in CM PL. A physical model taking into consideration the Si/SiGe hetero-interface composition is proposed to explain the fast and slow time-dependent recombination rates.

Original language	English (US)
Article number	6684282
Journal	IEEE Journal on Selected Topics in Quantum Electronics
Volume	20
Issue number	4
DOIs	https://doi.org/10.1109/JSTQE.2013.2292878
State	Published - Jul 1 2014

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Keywords

Carrier recombination
SiGe alloy
germanium
interface
nanostructures
photoluminescence
silicon

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10.1109/JSTQE.2013.2292878

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title = "Fast Light-Emitting Silicon-Germanium Nanostructures",

abstract = "Results obtained from photoluminescence (PL) measurements performed on Si/Si1-xGex nanostructures with a single Si1-xGex nanometer-thick layer (NL) incorporated into Si/Si0.6Ge0.4 cluster multilayers (CMs) are reviewed. By employing depth-dependent pulsed laser excitation, the SiGe NL PL decay is found to be nearly a 1000 times faster compared to that in CM PL. A physical model taking into consideration the Si/SiGe hetero-interface composition is proposed to explain the fast and slow time-dependent recombination rates.",

keywords = "Carrier recombination, SiGe alloy, germanium, interface, nanostructures, photoluminescence, silicon",

author = "Lockwood, {David J.} and Leonid Tsybeskov",

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year = "2014",

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T1 - Fast Light-Emitting Silicon-Germanium Nanostructures

AU - Lockwood, David J.

AU - Tsybeskov, Leonid

PY - 2014/7/1

Y1 - 2014/7/1

N2 - Results obtained from photoluminescence (PL) measurements performed on Si/Si1-xGex nanostructures with a single Si1-xGex nanometer-thick layer (NL) incorporated into Si/Si0.6Ge0.4 cluster multilayers (CMs) are reviewed. By employing depth-dependent pulsed laser excitation, the SiGe NL PL decay is found to be nearly a 1000 times faster compared to that in CM PL. A physical model taking into consideration the Si/SiGe hetero-interface composition is proposed to explain the fast and slow time-dependent recombination rates.

AB - Results obtained from photoluminescence (PL) measurements performed on Si/Si1-xGex nanostructures with a single Si1-xGex nanometer-thick layer (NL) incorporated into Si/Si0.6Ge0.4 cluster multilayers (CMs) are reviewed. By employing depth-dependent pulsed laser excitation, the SiGe NL PL decay is found to be nearly a 1000 times faster compared to that in CM PL. A physical model taking into consideration the Si/SiGe hetero-interface composition is proposed to explain the fast and slow time-dependent recombination rates.

KW - Carrier recombination

KW - SiGe alloy

KW - germanium

KW - interface

KW - nanostructures

KW - photoluminescence

KW - silicon

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JO - IEEE Journal on Selected Topics in Quantum Electronics

JF - IEEE Journal on Selected Topics in Quantum Electronics

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ER -

Fast Light-Emitting Silicon-Germanium Nanostructures

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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