Fast Light-Emitting Silicon-Germanium Nanostructures

David J. Lockwood, Leonid Tsybeskov

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

Results obtained from photoluminescence (PL) measurements performed on Si/Si1-xGex nanostructures with a single Si1-xGex nanometer-thick layer (NL) incorporated into Si/Si0.6Ge0.4 cluster multilayers (CMs) are reviewed. By employing depth-dependent pulsed laser excitation, the SiGe NL PL decay is found to be nearly a 1000 times faster compared to that in CM PL. A physical model taking into consideration the Si/SiGe hetero-interface composition is proposed to explain the fast and slow time-dependent recombination rates.

Original languageEnglish (US)
Article number6684282
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume20
Issue number4
DOIs
StatePublished - Jul 1 2014

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Keywords

  • Carrier recombination
  • SiGe alloy
  • germanium
  • interface
  • nanostructures
  • photoluminescence
  • silicon

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