Fast light-emitting silicon-germanium nanostructures for optical interconnects

D. J. Lockwood; L. Tsybeskov

doi:10.1007/s11082-012-9549-0

Fast light-emitting silicon-germanium nanostructures for optical interconnects

D. J. Lockwood, L. Tsybeskov

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Epitaxially-grown Si/SiGe quantum dot complexes produce efficient photoluminescence and electroluminescence in the desired spectral range of 1.3-1.6μm. The latest progress in our understanding of the physics of carrier recombination in Si/SiGe nanostructures is reviewed, and a new route toward CMOS compatible light emitters is proposed.

Original language	English (US)
Pages (from-to)	505-512
Number of pages	8
Journal	Optical and Quantum Electronics
Volume	44
Issue number	12-13
DOIs	https://doi.org/10.1007/s11082-012-9549-0
State	Published - Oct 2012

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Keywords

Dots
Electroluminescence
Germanium
Photoluminescence
Silicon

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10.1007/s11082-012-9549-0

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title = "Fast light-emitting silicon-germanium nanostructures for optical interconnects",

abstract = "Epitaxially-grown Si/SiGe quantum dot complexes produce efficient photoluminescence and electroluminescence in the desired spectral range of 1.3-1.6μm. The latest progress in our understanding of the physics of carrier recombination in Si/SiGe nanostructures is reviewed, and a new route toward CMOS compatible light emitters is proposed.",

keywords = "Dots, Electroluminescence, Germanium, Photoluminescence, Silicon",

author = "Lockwood, {D. J.} and L. Tsybeskov",

note = "Funding Information: Acknowledgments We would like to acknowledge the invaluable contributions over a number of years from our many collaborators on this work and thank especially B. Kamenev of NJIT, J.-M. Baribeau and X. Wu of NRC Canada, and T. Kamins of HP Laboratories. We acknowledge partial financial support for this research provided by US National Science Foundation, Intel Corporation, Semiconductor Research Corporation, and Foundation at NJIT.",

year = "2012",

month = oct,

doi = "10.1007/s11082-012-9549-0",

language = "English (US)",

volume = "44",

pages = "505--512",

journal = "Optical and Quantum Electronics",

issn = "0306-8919",

publisher = "Springer New York",

number = "12-13",

}

TY - JOUR

T1 - Fast light-emitting silicon-germanium nanostructures for optical interconnects

AU - Lockwood, D. J.

AU - Tsybeskov, L.

N1 - Funding Information: Acknowledgments We would like to acknowledge the invaluable contributions over a number of years from our many collaborators on this work and thank especially B. Kamenev of NJIT, J.-M. Baribeau and X. Wu of NRC Canada, and T. Kamins of HP Laboratories. We acknowledge partial financial support for this research provided by US National Science Foundation, Intel Corporation, Semiconductor Research Corporation, and Foundation at NJIT.

PY - 2012/10

Y1 - 2012/10

N2 - Epitaxially-grown Si/SiGe quantum dot complexes produce efficient photoluminescence and electroluminescence in the desired spectral range of 1.3-1.6μm. The latest progress in our understanding of the physics of carrier recombination in Si/SiGe nanostructures is reviewed, and a new route toward CMOS compatible light emitters is proposed.

AB - Epitaxially-grown Si/SiGe quantum dot complexes produce efficient photoluminescence and electroluminescence in the desired spectral range of 1.3-1.6μm. The latest progress in our understanding of the physics of carrier recombination in Si/SiGe nanostructures is reviewed, and a new route toward CMOS compatible light emitters is proposed.

KW - Dots

KW - Electroluminescence

KW - Germanium

KW - Photoluminescence

KW - Silicon

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SN - 0306-8919

VL - 44

SP - 505

EP - 512

JO - Optical and Quantum Electronics

JF - Optical and Quantum Electronics

IS - 12-13

ER -

Fast light-emitting silicon-germanium nanostructures for optical interconnects

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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