Fast light-emitting silicon-germanium nanostructures for optical interconnects

D. J. Lockwood, L. Tsybeskov

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

Epitaxially-grown Si/SiGe quantum dot complexes produce efficient photoluminescence and electroluminescence in the desired spectral range of 1.3-1.6μm. The latest progress in our understanding of the physics of carrier recombination in Si/SiGe nanostructures is reviewed, and a new route toward CMOS compatible light emitters is proposed.

Original languageEnglish (US)
Pages (from-to)505-512
Number of pages8
JournalOptical and Quantum Electronics
Volume44
Issue number12-13
DOIs
StatePublished - Oct 2012

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Keywords

  • Dots
  • Electroluminescence
  • Germanium
  • Photoluminescence
  • Silicon

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