Fast luminescence in silicon-germanium nanostructures

D. J. Lockwood; X. Wu; J. M. Baribeau; N. Modi; L. Tsybeskov

doi:10.1149/05041.0035ecst

Fast luminescence in silicon-germanium nanostructures

D. J. Lockwood, X. Wu, J. M. Baribeau, N. Modi, L. Tsybeskov

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Epitaxially-grown three-dimensional Si/SiGe nanostructures produce photoluminescence and electroluminescence in the desired spectral range of 1.3-1.6 μm. We show that by controlling and modifying such Ge-rich SiGe nanoclusters during growth it is possible to fabricate very fast and hence more efficient SiGe light-emitting devices. The physics of carrier recombination in these Si/SiGe nanostructures is discussed. The present results provide another possible route toward CMOS compatible light emitters.

Original language	English (US)
Pages (from-to)	35-47
Number of pages	13
Journal	ECS Transactions
Volume	50
Issue number	41
DOIs	https://doi.org/10.1149/05041.0035ecst
State	Published - 2012

All Science Journal Classification (ASJC) codes

Engineering(all)

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AU - Lockwood, D. J.

AU - Wu, X.

AU - Baribeau, J. M.

AU - Modi, N.

AU - Tsybeskov, L.

PY - 2012

Y1 - 2012

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AB - Epitaxially-grown three-dimensional Si/SiGe nanostructures produce photoluminescence and electroluminescence in the desired spectral range of 1.3-1.6 μm. We show that by controlling and modifying such Ge-rich SiGe nanoclusters during growth it is possible to fabricate very fast and hence more efficient SiGe light-emitting devices. The physics of carrier recombination in these Si/SiGe nanostructures is discussed. The present results provide another possible route toward CMOS compatible light emitters.

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Fast luminescence in silicon-germanium nanostructures

Abstract

All Science Journal Classification (ASJC) codes

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