Fast luminescence in silicon-germanium nanostructures

D. J. Lockwood, X. Wu, J. M. Baribeau, N. Modi, L. Tsybeskov

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

Epitaxially-grown three-dimensional Si/SiGe nanostructures produce photoluminescence and electroluminescence in the desired spectral range of 1.3-1.6 μm. We show that by controlling and modifying such Ge-rich SiGe nanoclusters during growth it is possible to fabricate very fast and hence more efficient SiGe light-emitting devices. The physics of carrier recombination in these Si/SiGe nanostructures is discussed. The present results provide another possible route toward CMOS compatible light emitters.

Original languageEnglish (US)
Pages (from-to)35-47
Number of pages13
JournalECS Transactions
Volume50
Issue number41
DOIs
StatePublished - 2012

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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