Abstract
Epitaxially-grown three-dimensional Si/SiGe nanostructures produce photoluminescence and electroluminescence in the desired spectral range of 1.3-1.6 μm. We show that by controlling and modifying such Ge-rich SiGe nanoclusters during growth it is possible to fabricate very fast and hence more efficient SiGe light-emitting devices. The physics of carrier recombination in these Si/SiGe nanostructures is discussed. The present results provide another possible route toward CMOS compatible light emitters.
Original language | English (US) |
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Pages (from-to) | 35-47 |
Number of pages | 13 |
Journal | ECS Transactions |
Volume | 50 |
Issue number | 41 |
DOIs | |
State | Published - 2012 |
All Science Journal Classification (ASJC) codes
- Engineering(all)