Fast luminescence in silicon-germanium nanostructures

D. J. Lockwood, X. Wu, J. M. Baribeau, N. Modi, L. Tsybeskov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations


Epitaxially-grown three-dimensional Si/SiGe nanostructures produce photoluminescence and electroluminescence in the desired spectral range of 1.3-1.6 μm. We show that by controlling and modifying such Ge-rich SiGe nanoclusters during growth it is possible to fabricate very fast and hence more efficient SiGe light-emitting devices. The physics of carrier recombination in these Si/SiGe nanostructures is discussed. The present results provide another possible route toward CMOS compatible light emitters.

Original languageEnglish (US)
Title of host publicationECS Transactions
PublisherElectrochemical Society Inc.
Number of pages13
ISBN (Electronic)9781607685395
StatePublished - 2013

Publication series

NameECS Transactions
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

All Science Journal Classification (ASJC) codes

  • General Engineering


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