@inproceedings{33f05584a54e4d01aaa1abb8a3dbdf25,
title = "Fast luminescence in silicon-germanium nanostructures",
abstract = "Epitaxially-grown three-dimensional Si/SiGe nanostructures produce photoluminescence and electroluminescence in the desired spectral range of 1.3-1.6 μm. We show that by controlling and modifying such Ge-rich SiGe nanoclusters during growth it is possible to fabricate very fast and hence more efficient SiGe light-emitting devices. The physics of carrier recombination in these Si/SiGe nanostructures is discussed. The present results provide another possible route toward CMOS compatible light emitters.",
author = "Lockwood, \{D. J.\} and X. Wu and Baribeau, \{J. M.\} and N. Modi and L. Tsybeskov",
year = "2013",
doi = "10.1149/05041.0035ecst",
language = "English (US)",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "41",
pages = "35--47",
booktitle = "ECS Transactions",
edition = "41",
}