@inproceedings{0bb673e169194a98b09031c6c17979c6,
title = "Feasibility of 50-nm device manufacture by 157-nm optical lithography: An initial assessment",
abstract = "The normalized process latitude (NPL) is used to assess the feasibility of 50-nm device manufacture by 157-nm optical lithography. A first NPL quantification assuming steady improvement of processing technology shows that 157-nm optical lithography is infeasible. A second NPL quantification investigates the amount of technology acceleration required to make 50-nm manufacture possible. It is concluded that photolithography is a viable lithography technique for the 50-nm technology generation only with significant improvements in focus control, photomask making, photoresist contrast, as well as aberration levels.",
keywords = "Acceleration, Focusing, Image quality, Integrated circuit technology, Lithography, Manufacturing processes, Optical devices, Optical sensors, Resists, Robustness",
author = "Pong, {Wing Tai} and A. Wong",
note = "Publisher Copyright: {\textcopyright} 2002 IEEE.; 9th IEEE Hong Kong Electron Devices Meeting, HKEDM 2002 ; Conference date: 22-06-2002",
year = "2002",
doi = "10.1109/HKEDM.2002.1029150",
language = "English (US)",
series = "Proceedings of the IEEE Hong Kong Electron Devices Meeting",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "31--34",
booktitle = "Proceedings - 2002 IEEE Hong Kong Electron Devices Meeting, HKEDM 2002",
address = "United States",
}