TY - JOUR
T1 - Field-angle and DC-bias dependence of spin-torque diode in giant magnetoresistive microstripe
AU - Li, X.
AU - Zhou, Y.
AU - Zheng, C.
AU - Chan, P. H.
AU - Chan, M.
AU - Pong, Philip W.T.
N1 - Publisher Copyright:
© 2016 Author(s).
PY - 2016/11/7
Y1 - 2016/11/7
N2 - The spin torque diode effect in all metal spintronic devices has been proposed as a microwave detector with a high power limit and resistivity to breakdown. The previous works have revealed the field-angle dependence of the rectified DC voltage (VDC) in the ferromagnetic stripe. The giant magnetoresistive (GMR) microstripe exhibits higher sensitivity compared with the ferromagnetic stripe. However, the influence of the magnetic field direction and bias current in the spin rectification of GMR microstripe is not yet reported. In this work, the angular dependence and bias dependence of resonant frequency (fR) and VDC are investigated. A macrospin model concerning the contribution of magnetic field, shape anisotropy, and unidirectional anisotropy is engaged to interpret the experimental data. fR exhibits a |sin δH| dependence on the in-plane field angle (δH). VDC presents either |sin δH| or |sin2 δH cos δH | relation, depending on the magnitude of Hext. Optimized VDC of 24 μV is achieved under 4 mT magnetic field applied at δH = 170°. Under out-of-plane magnetic field, fR shows a cos 2θH reliance on the polar angle (θH), whereas VDC is sin θH dependent. The Oersted field of the DC bias current (IDC) modifies the effective field, resulting in shifted fR. Enhanced VDC with increasing IDC is attributed to the elevated contribution of spin-transfer torque. Maximum VDC of 35.2 μV is achieved, corresponding to 47% increase compared with the optimized value under zero bias. Higher IDC also results in enlarged damping parameter in the free layer, resulting in increased linewidth in the spin torque diode spectra. This work experimentally and analytically reveals the angular dependence of fR and VDC in the GMR microstripe. The results further demonstrate a highly tunable fR and optimized VDC by bias current without the external magnetic field. GMR microstripe holds promise for application as a high-power, frequency-tunable microwave detector that works under small or zero magnetic field.
AB - The spin torque diode effect in all metal spintronic devices has been proposed as a microwave detector with a high power limit and resistivity to breakdown. The previous works have revealed the field-angle dependence of the rectified DC voltage (VDC) in the ferromagnetic stripe. The giant magnetoresistive (GMR) microstripe exhibits higher sensitivity compared with the ferromagnetic stripe. However, the influence of the magnetic field direction and bias current in the spin rectification of GMR microstripe is not yet reported. In this work, the angular dependence and bias dependence of resonant frequency (fR) and VDC are investigated. A macrospin model concerning the contribution of magnetic field, shape anisotropy, and unidirectional anisotropy is engaged to interpret the experimental data. fR exhibits a |sin δH| dependence on the in-plane field angle (δH). VDC presents either |sin δH| or |sin2 δH cos δH | relation, depending on the magnitude of Hext. Optimized VDC of 24 μV is achieved under 4 mT magnetic field applied at δH = 170°. Under out-of-plane magnetic field, fR shows a cos 2θH reliance on the polar angle (θH), whereas VDC is sin θH dependent. The Oersted field of the DC bias current (IDC) modifies the effective field, resulting in shifted fR. Enhanced VDC with increasing IDC is attributed to the elevated contribution of spin-transfer torque. Maximum VDC of 35.2 μV is achieved, corresponding to 47% increase compared with the optimized value under zero bias. Higher IDC also results in enlarged damping parameter in the free layer, resulting in increased linewidth in the spin torque diode spectra. This work experimentally and analytically reveals the angular dependence of fR and VDC in the GMR microstripe. The results further demonstrate a highly tunable fR and optimized VDC by bias current without the external magnetic field. GMR microstripe holds promise for application as a high-power, frequency-tunable microwave detector that works under small or zero magnetic field.
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U2 - 10.1063/1.4967175
DO - 10.1063/1.4967175
M3 - Article
AN - SCOPUS:84994893938
SN - 0003-6951
VL - 109
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 19
M1 - 192402
ER -