Field dependent carrier transport mechanisms in metal-insulator-metal devices with Ba_0.8Sr_0.2TiO₃/ZrO₂ heterostructured thin films as the dielectric

Keyphrases

• Dielectric 100%
• Field Dependence 100%
• Heterostructure 100%
• Field Regions 100%
• Carrier Transport Mechanism 100%
• Zirconium Dioxide 100%
• Ba0.8Sr0.2TiO3 100%
• Metal-insulator-metal Devices 100%
• Leakage Current 60%
• Conduction Process 60%
• Trap Level 40%
• Activation Energy 40%
• Ohmic Conduction 40%
• Temperature Range 20%
• Conduction Mechanism 20%
• Layer Thickness 20%
• Si Substrate 20%
• High Field 20%
• Silica 20%
• Level Energies 20%
• Trap Energy 20%
• Low Field 20%
• Poole-Frenkel Mechanism 20%
• Deep Traps 20%
• Device Structure 20%
• Energy Band Diagram 20%
• Shallow Levels 20%
• Electrical Conduction Mechanism 20%
• Medium Field 20%
• Current Mechanism 20%
• Multilayer Thin Films 20%
• Sol-gel Process 20%
• Deep Electron Traps 20%
• Shallow Electron Trap 20%
• Space Charge Limited Current 20%
• Leakage Mechanism 20%
• I-V Measurement 20%

Engineering

• Transport Mechanism 100%
• Thin Films 100%
• Dielectrics 100%
• Field Region 100%
• Metal-Insulator-Metal 100%
• Shallower 40%
• Activation Energy 40%
• Ohmic Conduction 40%
• Electron Trap 40%
• Temperature Range 20%
• Layer Thickness 20%
• Si Substrate 20%
• Level Energy 20%
• Deep Level 20%
• Individual Layer 20%
• Device Structure 20%
• Sol-Gel Process 20%
• Space Charge 20%
• Energy Band Diagram 20%

Material Science

• Thin Films 100%
• Dielectric Material 100%
• Carrier Transport 100%
• Zirconia 100%
• Activation Energy 50%
• Sol-Gel 25%