Field dependent carrier transport mechanisms in metal-insulator-metal devices with Ba_0.8Sr_0.2TiO₃/ZrO₂ heterostructured thin films as the dielectric

Engineering & Materials Science

• Activation energy 35%
• Band structure 23%
• Carrier transport 79%
• Electric potential 8%
• Electric space charge 22%
• Electron energy levels 39%
• Electron traps 63%
• Electrons 34%
• Leakage currents 54%
• MIM devices 100%
• Sol-gel process 23%
• Substrates 12%
• Temperature 6%
• Thin films 48%

Chemical Compounds

• Dielectric Material 45%
• Electrical Conductivity 13%
• Electron Particle 18%
• Electron Trap 48%
• Electronic Band Structure 17%
• Energy 16%
• Leakage Current 67%
• Reaction Activation Energy 23%
• Sol Gel Process 13%
• Space Charge 21%
• Voltage 12%

Physics & Astronomy

• activation energy 12%
• conduction 28%
• diagrams 6%
• electric potential 4%
• electrons 14%
• energy bands 7%
• energy levels 13%
• insulators 37%
• leakage 28%
• metals 26%
• sol-gel processes 10%
• space charge 7%
• temperature 2%
• thin films 26%
• traps 31%