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Field dependent electrical conduction in HfO
2
/SiO
2
gate stack for before and after constant voltage stressing
S. K. Sahoo,
D. Misra
Electrical and Computer Engineering
Research output
:
Contribution to journal
›
Article
›
peer-review
14
Scopus citations
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2
/SiO
2
gate stack for before and after constant voltage stressing'. Together they form a unique fingerprint.
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Physics & Astronomy
conduction
100%
electric potential
81%
leakage
49%
energy levels
48%
traps
44%
temperature
35%
defects
33%
capacitors
26%
trapping
23%
oxygen
18%
electric fields
17%
room temperature
16%