Keyphrases
Field Dependence
100%
HfO2
100%
Silica
100%
Gate Stack
100%
Field Regions
100%
Constant Voltage
100%
Electrical Conduction
100%
Temperature Range
66%
Trap Energy
66%
Poole-Frenkel Mechanism
66%
Order of Magnitude
33%
High Temperature
33%
Room Temperature
33%
Conduction Mechanism
33%
Stress-induced
33%
High Field
33%
Whole-field
33%
Leakage Current
33%
NMOS
33%
Elevated Temperature
33%
Ohmic Conduction
33%
Charge Trapping
33%
Current-voltage
33%
Capacitors
33%
Electrical Conduction Mechanism
33%
I-V Measurement
33%
Defect Formation
33%
Three-order
33%
Gate Leakage Current
33%
V(V)
33%
Low Electric Field
33%
New Defects
33%
Engineering
Gate Stack
100%
Field Region
100%
Constant Voltage
100%
Defects
66%
Temperature Range
66%
Electric Field
33%
Room Temperature
33%
Good Match
33%
Induced Stress
33%
Elevated Temperature
33%
Ohmic Conduction
33%
Material Science
Capacitor
100%
Charge Trapping
100%