@inproceedings{f0b49108ac7b4b7687bf4cee689b5010,
title = "Field dependent electrical conduction in TiN/HfO2/SiO 2/P-Si (nMOS) capacitor for before and after stressing",
abstract = "The electrical conduction mechanism contributing to the leakage current at different field regions and different temperatures have been studied in this work. The current-voltage (I-V) measurement of TiN/HfO2/SiO 2/P-Si nMOS capacitor, taken before and after constant voltage stress suggests that Poole-Frenkel mechanism is the dominant conduction mechanism. It was also observed that at low field region Ohmic conduction dominates. Trap energy level (φt) of 0.36 eV, obtained from Poole-Frenkel mechanism indicates that the defect is oxygen-related and is a good match with the reported value for V-/V-- in HfO2. Significant charge trapping at low level stress was observed whereas at high level and elevated temperature stressing suggests a variation of trap energy level indicating new defect formation.",
author = "Sahoo, {S. K.} and Durgamadhab Misra",
year = "2010",
month = dec,
day = "1",
doi = "10.1149/1.3481648",
language = "English (US)",
isbn = "9781566778220",
series = "ECS Transactions",
number = "3",
pages = "591--599",
booktitle = "Physics and Technology of High-k Materials 8",
edition = "3",
note = "8th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonice - 218th ECS Meeting ; Conference date: 11-10-2010 Through 15-10-2010",
}