Field dependent electrical conduction in TiN/HfO2/SiO 2/P-Si (nMOS) capacitor for before and after stressing

S. K. Sahoo, Durgamadhab Misra

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The electrical conduction mechanism contributing to the leakage current at different field regions and different temperatures have been studied in this work. The current-voltage (I-V) measurement of TiN/HfO2/SiO 2/P-Si nMOS capacitor, taken before and after constant voltage stress suggests that Poole-Frenkel mechanism is the dominant conduction mechanism. It was also observed that at low field region Ohmic conduction dominates. Trap energy level (φt) of 0.36 eV, obtained from Poole-Frenkel mechanism indicates that the defect is oxygen-related and is a good match with the reported value for V-/V-- in HfO2. Significant charge trapping at low level stress was observed whereas at high level and elevated temperature stressing suggests a variation of trap energy level indicating new defect formation.

Original languageEnglish (US)
Title of host publicationPhysics and Technology of High-k Materials 8
Pages591-599
Number of pages9
Edition3
DOIs
StatePublished - Dec 1 2010
Event8th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonice - 218th ECS Meeting - Las Vegas, NV, United States
Duration: Oct 11 2010Oct 15 2010

Publication series

NameECS Transactions
Number3
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other8th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonice - 218th ECS Meeting
Country/TerritoryUnited States
CityLas Vegas, NV
Period10/11/1010/15/10

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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