Field-effect transistors with graphene channels and quantum dots: Gate control and photo-induced effects

Samarth Trivedi; Haim Grebel

doi:10.1109/NANO.2011.6144614

Field-effect transistors with graphene channels and quantum dots: Gate control and photo-induced effects

Samarth Trivedi, Haim Grebel

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

Field effect transistors with channels made of graphene layer(s) are explored. The graphene layer(s) are brought into contact with semiconductor quantum dots and the effects of pump light on its electrical characteristics are assessed. Negative differential resistance (NDR) is observed as a function of gate voltage and as a function of pump light illumination. The dots' photoluminescence (PL) has increased abruptly to twice its value as a function of source-drain voltage.

Original language	English (US)
Title of host publication	2011 11th IEEE International Conference on Nanotechnology, NANO 2011
Pages	1584-1587
Number of pages	4
DOIs	https://doi.org/10.1109/NANO.2011.6144614
State	Published - 2011
Event	2011 11th IEEE International Conference on Nanotechnology, NANO 2011 - Portland, OR, United States Duration: Aug 15 2011 → Aug 19 2011

Publication series

Name	Proceedings of the IEEE Conference on Nanotechnology
ISSN (Print)	1944-9399
ISSN (Electronic)	1944-9380

Other

Other	2011 11th IEEE International Conference on Nanotechnology, NANO 2011
Country/Territory	United States
City	Portland, OR
Period	8/15/11 → 8/19/11

All Science Journal Classification (ASJC) codes

Bioengineering
Electrical and Electronic Engineering
Materials Chemistry
Condensed Matter Physics

Keywords

Field effect transistors (FET)
enhanced photoluminescence
graphene channels
negative differential resistance (NDR)
quantum dots (QD)

Access to Document

10.1109/NANO.2011.6144614

Cite this

@inproceedings{1e7a718a858c443b9028b6cfc1739ab8,

title = "Field-effect transistors with graphene channels and quantum dots: Gate control and photo-induced effects",

abstract = "Field effect transistors with channels made of graphene layer(s) are explored. The graphene layer(s) are brought into contact with semiconductor quantum dots and the effects of pump light on its electrical characteristics are assessed. Negative differential resistance (NDR) is observed as a function of gate voltage and as a function of pump light illumination. The dots' photoluminescence (PL) has increased abruptly to twice its value as a function of source-drain voltage.",

keywords = "Field effect transistors (FET), enhanced photoluminescence, graphene channels, negative differential resistance (NDR), quantum dots (QD)",

author = "Samarth Trivedi and Haim Grebel",

year = "2011",

doi = "10.1109/NANO.2011.6144614",

language = "English (US)",

isbn = "9781457715143",

series = "Proceedings of the IEEE Conference on Nanotechnology",

pages = "1584--1587",

booktitle = "2011 11th IEEE International Conference on Nanotechnology, NANO 2011",

note = "2011 11th IEEE International Conference on Nanotechnology, NANO 2011 ; Conference date: 15-08-2011 Through 19-08-2011",

}

Trivedi, S & Grebel, H 2011, Field-effect transistors with graphene channels and quantum dots: Gate control and photo-induced effects. in 2011 11th IEEE International Conference on Nanotechnology, NANO 2011., 6144614, Proceedings of the IEEE Conference on Nanotechnology, pp. 1584-1587, 2011 11th IEEE International Conference on Nanotechnology, NANO 2011, Portland, OR, United States, 8/15/11. https://doi.org/10.1109/NANO.2011.6144614

Field-effect transistors with graphene channels and quantum dots: Gate control and photo-induced effects. / Trivedi, Samarth; Grebel, Haim.
2011 11th IEEE International Conference on Nanotechnology, NANO 2011. 2011. p. 1584-1587 6144614 (Proceedings of the IEEE Conference on Nanotechnology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Field-effect transistors with graphene channels and quantum dots

T2 - 2011 11th IEEE International Conference on Nanotechnology, NANO 2011

AU - Trivedi, Samarth

AU - Grebel, Haim

PY - 2011

Y1 - 2011

N2 - Field effect transistors with channels made of graphene layer(s) are explored. The graphene layer(s) are brought into contact with semiconductor quantum dots and the effects of pump light on its electrical characteristics are assessed. Negative differential resistance (NDR) is observed as a function of gate voltage and as a function of pump light illumination. The dots' photoluminescence (PL) has increased abruptly to twice its value as a function of source-drain voltage.

AB - Field effect transistors with channels made of graphene layer(s) are explored. The graphene layer(s) are brought into contact with semiconductor quantum dots and the effects of pump light on its electrical characteristics are assessed. Negative differential resistance (NDR) is observed as a function of gate voltage and as a function of pump light illumination. The dots' photoluminescence (PL) has increased abruptly to twice its value as a function of source-drain voltage.

KW - Field effect transistors (FET)

KW - enhanced photoluminescence

KW - graphene channels

KW - negative differential resistance (NDR)

KW - quantum dots (QD)

UR - http://www.scopus.com/inward/record.url?scp=84858986584&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84858986584&partnerID=8YFLogxK

U2 - 10.1109/NANO.2011.6144614

DO - 10.1109/NANO.2011.6144614

M3 - Conference contribution

AN - SCOPUS:84858986584

SN - 9781457715143

T3 - Proceedings of the IEEE Conference on Nanotechnology

SP - 1584

EP - 1587

BT - 2011 11th IEEE International Conference on Nanotechnology, NANO 2011

Y2 - 15 August 2011 through 19 August 2011

ER -

Field-effect transistors with graphene channels and quantum dots: Gate control and photo-induced effects

Abstract

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All Science Journal Classification (ASJC) codes

Keywords

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