Field-effect transistors with graphene channels and quantum dots: Gate control and photo-induced effects

Samarth Trivedi, Haim Grebel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Field effect transistors with channels made of graphene layer(s) are explored. The graphene layer(s) are brought into contact with semiconductor quantum dots and the effects of pump light on its electrical characteristics are assessed. Negative differential resistance (NDR) is observed as a function of gate voltage and as a function of pump light illumination. The dots' photoluminescence (PL) has increased abruptly to twice its value as a function of source-drain voltage.

Original languageEnglish (US)
Title of host publication2011 11th IEEE International Conference on Nanotechnology, NANO 2011
Pages1584-1587
Number of pages4
DOIs
StatePublished - Dec 1 2011
Event2011 11th IEEE International Conference on Nanotechnology, NANO 2011 - Portland, OR, United States
Duration: Aug 15 2011Aug 19 2011

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380

Other

Other2011 11th IEEE International Conference on Nanotechnology, NANO 2011
CountryUnited States
CityPortland, OR
Period8/15/118/19/11

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

Keywords

  • Field effect transistors (FET)
  • enhanced photoluminescence
  • graphene channels
  • negative differential resistance (NDR)
  • quantum dots (QD)

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