Field-plated and back-barrier engineered wide-bandgap III-nitride/β-Ga₂O₃ nano-HEMT for emerging RF/microwave micro/nanoelectronics applications

In this study, a recessed gate wide bandgap III-Nitride (AlN, GaN) nano-HEMT on a lattice matched β-Ga₂O₃ substrate is proposed. This study aims to enhance DC and RF/microwave performance characteristics of proposed GaN/β-Ga₂O₃ HEMT while minimizing the influence of short channel and leakage current by using an Al_0.12Ga_0.88N layer configuration and field-plate mechanism. The analysis focuses on evaluating an impact of AlGaN back layer on HEMT's overall performance. The placement of Al_0.12Ga_0.88N layer helps to increase a conduction band level that lowers current leakage loss below GaN buffer and facilitates to keep an abundant 2DEG contained to a narrow channel. Additionally, field-plate design allows for better control of electric field distribution under gate region, yielding improved breakdown voltage characteristics. This research aims to contribute the advancement of III-nitride nano-HEMT technology on newly emerging ultra-wide bandgap β-Ga₂O₃ substrate and pave the way for its widespread adoption in various power and RF/microwave applications.