Field-plated and back-barrier engineered wide-bandgap III-nitride/β-Ga2O3 nano-HEMT for emerging RF/microwave micro/nanoelectronics applications

G. Purnachandra Rao, Trupti Ranjan Lenka, Hieu Pham Trung Nguyen

Research output: Contribution to journalArticlepeer-review

Abstract

In this study, a recessed gate wide bandgap III-Nitride (AlN, GaN) nano-HEMT on a lattice matched β-Ga2O3 substrate is proposed. This study aims to enhance DC and RF/microwave performance characteristics of proposed GaN/β-Ga2O3 HEMT while minimizing the influence of short channel and leakage current by using an Al0.12Ga0.88N layer configuration and field-plate mechanism. The analysis focuses on evaluating an impact of AlGaN back layer on HEMT's overall performance. The placement of Al0.12Ga0.88N layer helps to increase a conduction band level that lowers current leakage loss below GaN buffer and facilitates to keep an abundant 2DEG contained to a narrow channel. Additionally, field-plate design allows for better control of electric field distribution under gate region, yielding improved breakdown voltage characteristics. This research aims to contribute the advancement of III-nitride nano-HEMT technology on newly emerging ultra-wide bandgap β-Ga2O3 substrate and pave the way for its widespread adoption in various power and RF/microwave applications.

Original languageEnglish (US)
Article number115365
JournalMicroelectronics Reliability
Volume155
DOIs
StatePublished - Apr 2024
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Keywords

  • 2DEG
  • Back barrier
  • Field-plate
  • HEMT
  • Polarization
  • TCAD
  • β-GaO

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