Abstract
The stress in the substrate of a thin film/substrate structure consists of two portions: one is due to the difference of the thermal expansion coefficients of substrate material and films, and the other is due to the discontinuity of thin films. The stress in the oxidized thin film is estimated to be in the order of 109 dyne/cm2. Overall, a powerful means to understand stress-related aspects in microelectronic materials, such as film/substrate structures is provided.
| Original language | English (US) |
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| Pages | 272-274 |
| Number of pages | 3 |
| State | Published - 1995 |
| Event | Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China Duration: Oct 24 1995 → Oct 28 1995 |
Other
| Other | Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology |
|---|---|
| City | Beijing, China |
| Period | 10/24/95 → 10/28/95 |
All Science Journal Classification (ASJC) codes
- General Engineering