Film-induced stress in substrate/film structure

Hancheng Liang, Shounan Zhao, Ganming Qin, Ken Chin

Research output: Contribution to conferencePaperpeer-review

Abstract

The stress in the substrate of a thin film/substrate structure consists of two portions: one is due to the difference of the thermal expansion coefficients of substrate material and films, and the other is due to the discontinuity of thin films. The stress in the oxidized thin film is estimated to be in the order of 109 dyne/cm2. Overall, a powerful means to understand stress-related aspects in microelectronic materials, such as film/substrate structures is provided.

Original languageEnglish (US)
Pages272-274
Number of pages3
StatePublished - Dec 1 1995
EventProceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China
Duration: Oct 24 1995Oct 28 1995

Other

OtherProceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology
CityBeijing, China
Period10/24/9510/28/95

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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